| No. |
Part Name |
Description |
Manufacturer |
| 31 |
RM150DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 32 |
RM250DZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 33 |
RM250DZ-2H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 34 |
RM250DZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 35 |
RM250DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 36 |
RM30DZ-24 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 37 |
RM30DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 38 |
RM30DZ-H |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 39 |
RM30DZ-M |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 40 |
RM500DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 41 |
RM500DZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 42 |
RM500DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 43 |
RM500DZ-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 44 |
RM500DZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 45 |
RM500DZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 46 |
RM500DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 47 |
RM60DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 48 |
RM60DZ-24 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 49 |
RM60DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 50 |
RM60DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 51 |
RM60DZ-H |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 52 |
RM60DZ-M |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 53 |
TM130DZ-24 |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 54 |
TM130DZ-2H |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 55 |
TM130DZ-H |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 56 |
TM130DZ-M |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 57 |
TM200DZ-24 |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 58 |
TM200DZ-2H |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 59 |
TM200DZ-H |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 60 |
TM200DZ-M |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| | | |
