| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AP6015-18M10G-13 |
HIGH EFFICIENCY STEP-DOWN LOW POWER DC-DC CONVERTER |
Diodes |
| 32 |
AP6015-25M10G-13 |
HIGH EFFICIENCY STEP-DOWN LOW POWER DC-DC CONVERTER |
Diodes |
| 33 |
AP6015-33M10G-13 |
HIGH EFFICIENCY STEP-DOWN LOW POWER DC-DC CONVERTER |
Diodes |
| 34 |
AP6714M10G-13 |
1.8MHz SYNCHRONOUS BOOST CONVERTER |
Diodes |
| 35 |
CY7C1340G-100AXC |
4-Mbit (128K x 32) Pipelined DCD Sync SRAM |
Cypress |
| 36 |
CY7C1350G-133AXC |
4-Mbit (128 K � 36) Pipelined SRAM with NoBL� Architecture |
Cypress |
| 37 |
CY7C1350G-133AXCT |
4-Mbit (128 K � 36) Pipelined SRAM with NoBL� Architecture |
Cypress |
| 38 |
CY7C1350G-133AXI |
4-Mbit (128 K � 36) Pipelined SRAM with NoBL� Architecture |
Cypress |
| 39 |
CY7C1350G-133AXIKG |
4-Mbit (128 K � 36) Pipelined SRAM with NoBL� Architecture |
Cypress |
| 40 |
CY7C1350G-133AXIT |
4-Mbit (128 K � 36) Pipelined SRAM with NoBL� Architecture |
Cypress |
| 41 |
DF20G-10DP-1C |
1 mm Pitch Double Rows Low Profile Board-to-Cable Connectors |
Hirose Electric |
| 42 |
DF20G-10DP-1H |
1 mm Pitch Double Rows Low Profile Board-to-Cable Connectors |
Hirose Electric |
| 43 |
DF20G-10DP-1V |
1 mm Pitch Double Rows Low Profile Board-to-Cable Connectors |
Hirose Electric |
| 44 |
DF20G-10DS-1C |
1 mm Pitch Double Rows Low Profile Board-to-Cable Connectors |
Hirose Electric |
| 45 |
DF20G-10DS-1H |
1 mm Pitch Double Rows Low Profile Board-to-Cable Connectors |
Hirose Electric |
| 46 |
DF20G-10DS-1V |
1 mm Pitch Double Rows Low Profile Board-to-Cable Connectors |
Hirose Electric |
| 47 |
GAO10G-1A |
Gallium arsenide GUNN element |
Siemens |
| 48 |
GAO10G-1A |
Gallium arsenide GUNN element |
Siemens |
| 49 |
GAO10G-1A |
Gallium-arsenide GUNN device |
Siemens |
| 50 |
GAO20G-1B |
Gallium arsenide GUNN element |
Siemens |
| 51 |
GAO20G-1B |
Gallium arsenide GUNN element |
Siemens |
| 52 |
GAO20G-1B |
Gallium-arsenide GUNN device |
Siemens |
| 53 |
GAO50G-1C |
Gallium arsenide GUNN element |
Siemens |
| 54 |
GAO50G-1C |
Gallium arsenide GUNN element |
Siemens |
| 55 |
GAO50G-1C |
Gallium-arsenide GUNN device |
Siemens |
| 56 |
HN27C4000G-10 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 57 |
HN27C4000G-12 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 58 |
HN27C4000G-15 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 59 |
IP120G-12 |
1.5A, 12V Negative Voltage Regulator |
SemeLAB |
| 60 |
IP120G-12-883B |
1.5A, 12V Negative Voltage Regulator |
SemeLAB |
| | | |
