No. |
Part Name |
Description |
Manufacturer |
31 |
FQAF20N40 |
400V N-Channel MOSFET |
Fairchild Semiconductor |
32 |
FQL50N40 |
400V N-Channel MOSFET |
Fairchild Semiconductor |
33 |
HGTD10N40F1 |
10A/ 400V and 500V N-Channel IGBTs |
Intersil |
34 |
HGTD10N40F1S |
10A/ 400V and 500V N-Channel IGBTs |
Intersil |
35 |
HGTH20N40C1 |
15A/ 20A/ 400V and 500V N-Channel IGBTs |
Intersil |
36 |
HGTH20N40C1D |
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
37 |
HGTH20N40E1 |
15A/ 20A/ 400V and 500V N-Channel IGBTs |
Intersil |
38 |
HGTH20N40E1D |
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
39 |
HGTP10N40C1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
40 |
HGTP10N40C1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
41 |
HGTP10N40E1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
42 |
HGTP10N40E1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
43 |
HGTP10N40F1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
44 |
IXFH30N40Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
45 |
IXFN80N48 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
46 |
IXFT30N40Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
47 |
M27V402-120N4TR |
4 Mbit 512Kb x 8 Low Voltage OTP EPROM |
ST Microelectronics |
48 |
M27V402-150N4TR |
4 Mbit 512Kb x 8 Low Voltage OTP EPROM |
ST Microelectronics |
49 |
M27V402-180N4TR |
4 Mbit 512Kb x 8 Low Voltage OTP EPROM |
ST Microelectronics |
50 |
M27V402-200N4TR |
4 Mbit 512Kb x 8 Low Voltage OTP EPROM |
ST Microelectronics |
51 |
MDD100N400 |
Diode power blocks |
IPRS Baneasa |
52 |
MDD100N400 |
100A 400V Double-Diode Compact Module |
IPRS Baneasa |
53 |
MDD220N400 |
Diode power blocks |
IPRS Baneasa |
54 |
MDD50N400 |
Diode Power Blocks |
IPRS Baneasa |
55 |
MGP20N40CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT |
Motorola |
56 |
MGP20N40CL-D |
SMARTDISCRETES Internally Clamped, N-Channel IGBT |
ON Semiconductor |
57 |
MTB10N40E |
TMOS POWER FET 10 AMPERES |
Motorola |
58 |
MTB10N40E |
10 Amp D2PAK Surface Mount Products, N-Channel, VDSS 400 |
ON Semiconductor |
59 |
MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
60 |
MTP10N40 |
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS |
Motorola |
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