No. |
Part Name |
Description |
Manufacturer |
31 |
251UL80S15 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
32 |
30S1 |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
33 |
30S1 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
34 |
30S1 |
Diode Switching 100V 3A 2-Pin Case R |
New Jersey Semiconductor |
35 |
30S10 |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
36 |
30S10 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
37 |
30S10 |
Diode Switching 1KV 3A 2-Pin Case R |
New Jersey Semiconductor |
38 |
3210-240S1 |
Interface Connectors with 0.8mm spacing Docking Connectors |
Hirose Electric |
39 |
3210A-240S1 |
Interface Connectors with 0.8mm spacing Docking Connectors |
Hirose Electric |
40 |
3220-240S1 |
Interface Connectors with 0.8mm spacing Docking Connectors |
Hirose Electric |
41 |
3220A-240S1 |
Interface Connectors with 0.8mm spacing Docking Connectors |
Hirose Electric |
42 |
40HFL100S10 |
FAST RECOVERY DIODES |
International Rectifier |
43 |
40HFL100S10 |
Diode Switching 1KV 40A 2-Pin DO-5 |
New Jersey Semiconductor |
44 |
40HFL10S10 |
FAST RECOVERY DIODES |
International Rectifier |
45 |
40HFL20S10 |
FAST RECOVERY DIODES |
International Rectifier |
46 |
40HFL40S10 |
FAST RECOVERY DIODES |
International Rectifier |
47 |
40HFL60S10 |
FAST RECOVERY DIODES |
International Rectifier |
48 |
40HFL80S10 |
FAST RECOVERY DIODES |
International Rectifier |
49 |
40HFLR100S10 |
Diode Switching 1KV 40A 2-Pin DO-5 |
New Jersey Semiconductor |
50 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
51 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
52 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
53 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
54 |
60S1 |
Rectifier 50 - 1000 Volts 6 Amp Axial-Lead Glass Passivated |
Micro Commercial Components |
55 |
60S1 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
56 |
60S1 |
Diode Switching 100V 6A 2-Pin Case 5A |
New Jersey Semiconductor |
57 |
60S10 |
Rectifier 50 - 1000 Volts 6 Amp Axial-Lead Glass Passivated |
Micro Commercial Components |
58 |
60S10 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
59 |
60S10 |
Diode Switching 1KV 6A 2-Pin Case 5A |
New Jersey Semiconductor |
60 |
6FL100S10 |
6A, 12A AND 16A FAST RECOVERY RECTIFIERS |
International Rectifier |
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