| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CM100TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 32 |
CM100TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 33 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 34 |
CM100TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 35 |
CM100TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 36 |
CM100TU-12H |
Six IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 37 |
CM100TU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 38 |
CM100TU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 39 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 40 |
CM100TU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 41 |
CM100TU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 42 |
CM100TU-24H |
Six IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 43 |
CM150TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 44 |
CM150TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 45 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 46 |
CM150TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 47 |
CM150TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 48 |
CM150TU-12H |
Six IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 49 |
CM200TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 50 |
CM200TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 51 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 52 |
CM200TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 53 |
CM200TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 54 |
CM200TU-12H |
Six IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 55 |
CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 56 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| 57 |
CM50TU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 58 |
CM50TU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 59 |
CM50TU-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 60 |
CM50TU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| | | |
