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Datasheets for 1005

Datasheets found :: 843
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No. Part Name Description Manufacturer
31 AN1005 EXTENDING THE I 2 C BUS -- XI 2 C SGS Thomson Microelectronics
32 APHS1005MGCK 1.0 x 0.5 mm SMD chip LED lamp. Mega green (peak wavelength 574 nm). Lens type water clear. Kingbright Electronic
33 APHS1005SECK 1.0 x 0.5 mm SMD chip LED lamp. Super bright orange (peak wavelength 610 nm). Lens type water clear. Kingbright Electronic
34 APHS1005SURCK 1.0 x 0.5 mm SMD chip LED lamp. Hyper red (peak wavelength 640 nm). Lens type water clear. Kingbright Electronic
35 APHS1005SYCK 1.0 x 0.5 mm SMD chip LED lamp. Super bright yellow (peak wavelength 590 nm). Lens type water clear. Kingbright Electronic
36 APT10050B2LC POWER MOS VI 1000V 21A 0.500 Ohm Advanced Power Technology
37 APT10050B2VFR POWER MOS V 1000V 21A 0.500 Ohm Advanced Power Technology
38 APT10050B2VFRG FREDFETs Microsemi
39 APT10050B2VR POWER MOS V 1000V 21A 0.500 Ohm Advanced Power Technology
40 APT10050B2VRG MOSFET Microsemi
41 APT10050JLC POWER MOS VI 1000V 19A 0.500 Ohm Advanced Power Technology
42 APT10050JN POWER MOS IV 1000V 20.5A 0.50 Ohm Advanced Power Technology
43 APT10050JVFR POWER MOS V 1000V 19A 0.500 Ohm Advanced Power Technology
44 APT10050JVFR FREDFETs Microsemi
45 APT10050JVR POWER MOS V 1000V 19A 0.500 Ohm Advanced Power Technology
46 APT10050JVR MOSFET Microsemi
47 APT10050LLC POWER MOS VI 1000V 21A 0.500 Ohm Advanced Power Technology
48 APT10050LVFR POWER MOS V 1000V 21A 0.500 Ohm Advanced Power Technology
49 APT10050LVFRG FREDFETs Microsemi
50 APT10050LVR POWER MOS V 1000V 21A 0.500 Ohm Advanced Power Technology
51 APT10050LVRG MOSFET Microsemi
52 APT10057WVR POWER MOS V 1000V 17.3A 0.570 Ohm Advanced Power Technology
53 ASBI0V0BF-1005 SMD Schottky Barrier Diode Anachip
54 ASI1005 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
55 ASS4148BF-1005 Designed for mounting on small surface. Anachip
56 AT1005 PHASE CONTROL THYRISTOR POSEICO SPA
57 AT1005S18 PHASE CONTROL THYRISTOR POSEICO SPA
58 BF1005 RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
59 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
60 BF1005R RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Infineon


Datasheets found :: 843
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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