No. |
Part Name |
Description |
Manufacturer |
31 |
IC62VV1008LL-70B |
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM |
ICSI |
32 |
IC62VV1008LL-70BI |
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM |
ICSI |
33 |
IC62VV1008LL-70D |
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM |
ICSI |
34 |
IC62VV1008LL-70DI |
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM |
ICSI |
35 |
MC1008L |
Triple 3-Input Gate |
Motorola |
36 |
OTH10-1008L |
Bridge-connected thyristor stacks, single-phase |
Mullard |
37 |
QPD1008L |
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor |
Qorvo |
38 |
S1008L |
Thyristor, 8 amperes, 100 volt |
Teccor Electronics |
39 |
VP1008L |
MOSPOWER P-Channel Enhancement Mode Transistor 100V 0.28A |
Siliconix |
40 |
VP1008L |
-100 V, 5 ohm, P-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
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