| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BLA1011-200 |
Avionics LDMOS transistor |
Philips |
| 32 |
BLA1011-200R |
Avionics LDMOS transistor |
NXP Semiconductors |
| 33 |
BLA1011-300 |
Avionics LDMOS transistor |
NXP Semiconductors |
| 34 |
BLA6G1011-200R |
Power LDMOS transistor |
NXP Semiconductors |
| 35 |
BLA6H1011-600 |
LDMOS avionics power transistor |
NXP Semiconductors |
| 36 |
C67078-A1011-A2 |
main rationgs |
Siemens |
| 37 |
EIA1011-2P |
10.7-11.7GHz, 2W internally matched power FET |
Excelics Semiconductor |
| 38 |
EIA1011-4P |
10.7-11.7GHz, 4W internally matched power FET |
Excelics Semiconductor |
| 39 |
EIB1011-2P |
10.7-11.7GHz, 2W internally matched power FET |
Excelics Semiconductor |
| 40 |
EIB1011-4P |
10.7-11.7GHz, 4W internally matched power FET |
Excelics Semiconductor |
| 41 |
IRU1011-33CH |
1.3A Fixed LDO Linear Regulator in a MLPM 6-Leads package |
International Rectifier |
| 42 |
IRU1011-33CHTR |
1.3A Fixed LDO Linear Regulator in a MLPM 6-Leads package |
International Rectifier |
| 43 |
LC11011-141 |
Computer Image Signal Processing Full-Color Gray-Scale Processor |
SANYO |
| 44 |
MIV41011-72 |
3 Stack ISIS Diodes |
Microsemi |
| 45 |
MIV41011-M29 |
3 Stack ISIS Diodes |
Microsemi |
| 46 |
NEZ1011-2E |
2W X, Ku-BAND POWER GaAs MESFET |
NEC |
| 47 |
NEZ1011-8E |
8W X, Ku-BAND POWER GaAs MESFET |
NEC |
| 48 |
STAC1011-350 |
350W 36V 1030-1090 MHz LDMOS TRANSISTOR |
ST Microelectronics |
| 49 |
TDC1011-Q1 |
Automotive Ultrasonic Sensing Analog Front End (AFE) for Level and ID Sensing 28-TSSOP -40 to 125 |
Texas Instruments |
| 50 |
TIM1011-2L |
MICROWAVE POWER GaAs FET |
TOSHIBA |
| | | |
