| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IC61LV6416-10BI |
10ns; 3.3V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 32 |
IC61LV6416-10BI |
64K x 16 Hight Speed SRAM with 3.3V |
Integrated Circuit Solution Inc |
| 33 |
INA210BIDCKR |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125 |
Texas Instruments |
| 34 |
INA210BIDCKT |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125 |
Texas Instruments |
| 35 |
INA210BIRSWR |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125 |
Texas Instruments |
| 36 |
INA210BIRSWT |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125 |
Texas Instruments |
| 37 |
IS61LV12816-10BI |
10ns; 3.3V; 128K x 16 high-speed CMOS CMOS static RAM |
ICSI |
| 38 |
IS61LV12816-10BI |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 39 |
IS61LV12816L-10BI |
128K x 16 high-speed CMOS static RAM, 3.3V, 10ns |
Integrated Silicon Solution Inc |
| 40 |
IS61LV12824-10BI |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 41 |
IS61LV25616-10BI |
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Circuit Solution Inc |
| 42 |
IS61LV25616-10BI |
256K x 16 high speed asynchronous CMOS static RAM with 3.3v supply |
Integrated Silicon Solution Inc |
| 43 |
IS61LV25616AL-10BI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 44 |
IS61LV5128-10BI |
512K x 8 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 45 |
IS61LV5128AL-10BI |
512K x 8 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 46 |
IS61LV6416-10BI |
10ns; 3.3V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 47 |
IS61LV6416-10BI |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY |
Integrated Circuit Solution Inc |
| 48 |
IS61LV6416-10BI |
64K x 16 high-speed CMOS static RAM with 3.3V supply |
Integrated Silicon Solution Inc |
| 49 |
IS61NF25632-10BI |
256K x 32 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 50 |
IS61NF25636-10BI |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 51 |
IS61NF51218-10BI |
512K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 52 |
IS61NLF25636-10BI |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 53 |
IS61NLF51218-10BI |
512K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 54 |
IS61SF12832-10BI |
10ns; 3.3V; 128K x 32, 128 x 36 synchronous flow-through static RAM |
ICSI |
| 55 |
IS61SF12836-10BI |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 56 |
IS62LV12816ALL-10BI |
128K x 16 CMOS static RAM |
Integrated Silicon Solution Inc |
| 57 |
IS62LV12816BLL-10BI |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 58 |
IS62LV12816L-10BI |
128K x 16 CMOS static RAM |
Integrated Silicon Solution Inc |
| 59 |
IS62LV12816LL-10BI |
128K x 16 CMOS static RAM |
Integrated Silicon Solution Inc |
| 60 |
IS62V6416BLL-10BI |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
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