| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MAX9611EVKIT+ |
Evaluation Kit for the MAX9611 and MAX9612 |
MAXIM - Dallas Semiconductor |
| 32 |
MMSF3205 |
SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS |
Motorola |
| 33 |
MTP10N06 |
N-Channel Power MOSFETs, 11 A, 60-100 V |
Fairchild Semiconductor |
| 34 |
MTP10N10 |
N-Channel Power MOSFETs, 11 A, 60-100 V |
Fairchild Semiconductor |
| 35 |
NTMS4816N |
Power MOSFET, 30 V, 11 A, N-Channel |
ON Semiconductor |
| 36 |
PT6936 |
3.3V/2.5V 11 Amp 5V-Input Dual Output ISR |
Texas Instruments |
| 37 |
PT6936A |
3.3V/2.5V 11 Amp 5V-Input Dual Output ISR |
Texas Instruments |
| 38 |
PT6936C |
3.3V/2.5V 11 Amp 5V-Input Dual Output ISR |
Texas Instruments |
| 39 |
PT6936N |
3.3V/2.5V 11 Amp 5V-Input Dual Output ISR |
Texas Instruments |
| 40 |
PT6938 |
11 Amp 5V/3.3V-Input Dual-Output Integrated Switching Regulator |
Texas Instruments |
| 41 |
PT6938A |
11 Amp 5V/3.3V-Input Dual-Output Integrated Switching Regulator |
Texas Instruments |
| 42 |
PT6938C |
11 Amp 5V/3.3V-Input Dual-Output Integrated Switching Regulator |
Texas Instruments |
| 43 |
PT6938N |
11 Amp 5V/3.3V-Input Dual-Output Integrated Switching Regulator |
Texas Instruments |
| 44 |
PT6939 |
11 Amp 5V/3.3V-Input Dual-Output Integrated Switching Regulator |
Texas Instruments |
| 45 |
PT6939A |
11 Amp 5V/3.3V-Input Dual-Output Integrated Switching Regulator |
Texas Instruments |
| 46 |
PT6939C |
11 Amp 5V/3.3V-Input Dual-Output Integrated Switching Regulator |
Texas Instruments |
| 47 |
PT6939N |
11 Amp 5V/3.3V-Input Dual-Output Integrated Switching Regulator |
Texas Instruments |
| 48 |
STB11NM80 |
N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/D2PAK MDMESH POWER MOSFET |
ST Microelectronics |
| 49 |
STB11NM80T4 |
N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/TO-220FP/D2PAK/TO-247 MDMESH MOSFET |
ST Microelectronics |
| 50 |
STB12NM50ND |
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 51 |
STB13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 52 |
STB13NM60N |
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 53 |
STB15N65M5 |
N-channel 650 V, 0.308 Ohm, 11 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 54 |
STD111 ASIC |
Introduction |
Samsung Electronic |
| 55 |
STD111 ASIC |
Book Contents |
Samsung Electronic |
| 56 |
STD111 ASIC |
PLL 2013X |
Samsung Electronic |
| 57 |
STD111 ASIC |
Characteristics |
Samsung Electronic |
| 58 |
STD11NM65N |
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package |
ST Microelectronics |
| 59 |
STD12NM50ND |
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package |
ST Microelectronics |
| 60 |
STD13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
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