No. |
Part Name |
Description |
Manufacturer |
31 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
32 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
33 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
34 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
35 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
36 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
37 |
KLM-128DCAN |
6 V, size: 128 x 256 x 11 mm, LED dot matrix module |
AUK Corp |
38 |
KLM-162CAH |
6 V, size: 96 x 96 x 11 mm, LED dot matrix module |
AUK Corp |
39 |
KLM-162CAN |
6 V, size: 96 x 96 x 11 mm, LED dot matrix module |
AUK Corp |
40 |
KLM-162CYN |
6 V, size: 96 x 96 x 11 mm, LED dot matrix module |
AUK Corp |
41 |
KLM-162CYU |
6 V, size: 96 x 96 x 11 mm, LED dot matrix module |
AUK Corp |
42 |
KLM-163CAH |
6 V, size: 128 x 128 x 11 mm, LED dot matrix module |
AUK Corp |
43 |
KLM-163CAN |
6 V, size: 128 x 128 x 11 mm, LED dot matrix module |
AUK Corp |
44 |
KLM-321CAH |
6 V, size: 64 x 128 x 11 mm, LED dot matrix module |
AUK Corp |
45 |
KLM-321CAN |
6 V, size: 64 x 128 x 11 mm, LED dot matrix module |
AUK Corp |
46 |
KLM-321CGN |
Green, 5.25 V, size: 64 x 128 x 11 mm, LED dot matrix module |
AUK Corp |
47 |
KLM-321CON |
Orange, 5.25 V, size: 64 x 128 x 11 mm, LED dot matrix module |
AUK Corp |
48 |
KLM-321CRN |
Red, 5.25 V, size: 64 x 128 x 11 mm, LED dot matrix module |
AUK Corp |
49 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
50 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
51 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
52 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
53 |
LF411 MD8 |
Low Offset, Low Drift JFET Input Operational Amplifier |
National Semiconductor |
54 |
LF411 MD8 |
Low Offset, Low Drift JFET Input Operational Amplifier |
National Semiconductor |
55 |
LF411 MD8 |
Low Offset, Low Drift JFET Input Operational Amplifier |
National Semiconductor |
56 |
LF411 MDC |
Low Offset, Low Drift JFET Input Operational Amplifier |
National Semiconductor |
57 |
LF411 MDC |
Low Offset, Low Drift JFET Input Operational Amplifier |
National Semiconductor |
58 |
LF411 MDC |
Low Offset, Low Drift JFET Input Operational Amplifier |
National Semiconductor |
59 |
LF411 MDS |
Low Offset, Low Drift JFET Input Operational Amplifier |
National Semiconductor |
60 |
LF411 MDS |
Low Offset, Low Drift JFET Input Operational Amplifier |
National Semiconductor |
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