No. |
Part Name |
Description |
Manufacturer |
31 |
LM124 MDS |
Low Power Quad Operational Amplifier |
National Semiconductor |
32 |
LM124 MDS |
Low Power Quad Operational Amplifier |
National Semiconductor |
33 |
LM124 MDS |
Low Power Quad Operational Amplifier |
National Semiconductor |
34 |
LM124 MW8 |
Low Power Quad Operational Amplifier |
National Semiconductor |
35 |
LM124 MW8 |
Low Power Quad Operational Amplifier |
National Semiconductor |
36 |
LM124 MW8 |
Low Power Quad Operational Amplifier |
National Semiconductor |
37 |
MAX3964CEP |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
38 |
MAX3964ETP |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
39 |
MAX3964E_D |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
40 |
MAX3964E_DW |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
41 |
MAX3965CEP |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
42 |
MAX3965E_D |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
43 |
MAX3965E_DW |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
44 |
MAX3968CEP |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
45 |
MAX3968E_D |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
46 |
MAX3968E_DW |
+3.0 to +5.5 V, 124 to 266 Mbps limiting amplifier with loss-of-signal detector |
MAXIM - Dallas Semiconductor |
47 |
P4KE130A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
48 |
P4KE130CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
49 |
STB31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
50 |
STF31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
51 |
STFI31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in I2PAKFP package |
ST Microelectronics |
52 |
STP31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
53 |
STW31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
54 |
TPS5124 |
TPS5124 Dual Channel Synchronous Step-Down PWM Controller |
Texas Instruments |
55 |
TPS5124DBT |
TPS5124 Dual Channel Synchronous Step-Down PWM Controller |
Texas Instruments |
56 |
TPS5124DBTG4 |
TPS5124 Dual Channel Synchronous Step-Down PWM Controller 30-TSSOP -40 to 85 |
Texas Instruments |
57 |
TPS5124DBTR |
TPS5124 Dual Channel Synchronous Step-Down PWM Controller |
Texas Instruments |
58 |
TPS5124DBTRG4 |
TPS5124 Dual Channel Synchronous Step-Down PWM Controller |
Texas Instruments |
59 |
U124A |
124 Pin Ceramic Pin Grid Array, Cavity Up |
National Semiconductor |
60 |
UP124A |
124 Pin Molded Plastic Pin Grid Array |
National Semiconductor |
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