No. |
Part Name |
Description |
Manufacturer |
31 |
AS7C31025A-12TJC |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time |
Alliance Semiconductor |
32 |
AS7C31025A-12TJI |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time |
Alliance Semiconductor |
33 |
AS7C31026A-12BC |
3.3V 64K x 16 CM0S SRAM , 12ns access time |
Alliance Semiconductor |
34 |
AS7C31026A-12BI |
3.3V 64K x 16 CM0S SRAM , 12ns access time |
Alliance Semiconductor |
35 |
AS7C31026A-12JC |
3.3V 64K x 16 CM0S SRAM , 12ns access time |
Alliance Semiconductor |
36 |
AS7C31026A-12TC |
3.3V 64K x 16 CM0S SRAM , 12ns access time |
Alliance Semiconductor |
37 |
AS7C31026A-12TI |
3.3V 64K x 16 CM0S SRAM , 12ns access time |
Alliance Semiconductor |
38 |
AS7C3256-12JC |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
39 |
AS7C3256-12JI |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
40 |
AS7C3256-12PC |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
41 |
AS7C3256-12TC |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
42 |
AS7C3256-12TI |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
43 |
AS7C3256A-12JC |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
44 |
AS7C3256A-12JI |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
45 |
AS7C3256A-12TC |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
46 |
AS7C3256A-12TI |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time |
Alliance Semiconductor |
47 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
48 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
49 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
50 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
51 |
CD74HC112NSR |
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Set and Reset |
Texas Instruments |
52 |
CY7C1012AV25-12BGC |
512K x 24 static RAM, 12ns |
Cypress |
53 |
CY7C1012AV25-12BGI |
512K x 24 static RAM, 12ns |
Cypress |
54 |
CY7C1018BV33L-12VC |
128K x 8 static RAM, 12ns |
Cypress |
55 |
CY7C1019BV33-12ZC |
128K x 8 static RAM, 12ns |
Cypress |
56 |
CY7C1019BV33L-12ZC |
128K x 8 static RAM, 12ns |
Cypress |
57 |
CY7C1019L-12VC |
128K x 8 static RAM, 12ns |
Cypress |
58 |
CY7C1021BL-12ZC |
64K x 16 Static RAM, 5V, 12ns |
Cypress |
59 |
CY7C1022-12VC |
32K x 16 static RAM, 5V, 12ns |
Cypress |
60 |
CY7C1024AV33-12AC |
128K x 24 static RAM, 3.3V, 12ns |
Cypress |
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