No. |
Part Name |
Description |
Manufacturer |
31 |
1N5935C |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
32 |
1N5935D |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
33 |
1N6112 |
Diode TVS Single Bi-Dir 13.7V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
34 |
1N6112A |
Diode TVS Single Bi-Dir 13.7V 500W 2-Pin |
New Jersey Semiconductor |
35 |
1N6148 |
Diode TVS Single Bi-Dir 13.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
36 |
1N6148A |
Diode TVS Single Bi-Dir 13.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
37 |
1N6276A |
Diode TVS Single Uni-Dir 13.6V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
38 |
1N6276CA |
Diode TVS Single Bi-Dir 13.6V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
39 |
1N964 |
13.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
40 |
1N964 |
500 mW silicon planar zener diode. Max zener voltage 13.0 V. |
Fairchild Semiconductor |
41 |
1N964A |
13.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
42 |
1N964B |
13.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
43 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
44 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
45 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
46 |
2N3927 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
47 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
48 |
2SC1965 |
NPN epitaxial planar RF power VHF transistor 6W 13.5V |
Mitsubishi Electric Corporation |
49 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
50 |
78SR114 |
13.9Vout 1.5A Wide Input Positive Step-Down ISR |
Texas Instruments |
51 |
AAT1161 |
13.2V Input, 3A Step-Down Converter |
Skyworks Solutions |
52 |
AAT1161IWO-0.6-T1 |
13.2V Input, 3A Step-Down Converter |
Skyworks Solutions |
53 |
ACPDT-12VUA-HF |
Halogen Free ESD Array, VC=19V, VPV=8kV, VBD=13.3V |
Comchip Technology |
54 |
ACPDT-8V0UA-HF |
Halogen Free ESD Array, VC=13.4V, VPV=8kV, VBD=8.5V |
Comchip Technology |
55 |
AGM1232E-FEBD-T |
0.3-7.0V; 13.0mA; 20characters; dot size:0.40 x 0.45mm; dot pitch:0.44 x 0.49mm; liquid crystal display |
AZ Displays |
56 |
AGM1232E-FEBH-T |
0.3-7.0V; 13.0mA; 20characters; dot size:0.40 x 0.45mm; dot pitch:0.44 x 0.49mm; liquid crystal display |
AZ Displays |
57 |
AGM1232E-FEBS-T |
0.3-7.0V; 13.0mA; 20characters; dot size:0.40 x 0.45mm; dot pitch:0.44 x 0.49mm; liquid crystal display |
AZ Displays |
58 |
AGM1232E-FEBW-T |
0.3-7.0V; 13.0mA; 20characters; dot size:0.40 x 0.45mm; dot pitch:0.44 x 0.49mm; liquid crystal display |
AZ Displays |
59 |
AGM1232E-FEFD-T |
0.3-7.0V; 13.0mA; 20characters; dot size:0.40 x 0.45mm; dot pitch:0.44 x 0.49mm; liquid crystal display |
AZ Displays |
60 |
AGM1232E-FEFH-T |
0.3-7.0V; 13.0mA; 20characters; dot size:0.40 x 0.45mm; dot pitch:0.44 x 0.49mm; liquid crystal display |
AZ Displays |
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