No. |
Part Name |
Description |
Manufacturer |
31 |
CY7C1425KV18-250BZXI |
36-Mbit QDR� II SRAM Two-Word Burst Architecture |
Cypress |
32 |
CY7C1425KV18-300BZC |
36-Mbit QDR� II SRAM Two-Word Burst Architecture |
Cypress |
33 |
CY7C1425KV18-300BZXC |
36-Mbit QDR� II SRAM Two-Word Burst Architecture |
Cypress |
34 |
DS1425 |
Multi |
MAXIM - Dallas Semiconductor |
35 |
DS1425L-F5 |
Multi iButton |
MAXIM - Dallas Semiconductor |
36 |
DS1425L-F5+ |
Multi iButton |
MAXIM - Dallas Semiconductor |
37 |
ENA1425 |
1/4 and 1/3-Duty LCD Display Driver with Key Input Function |
ON Semiconductor |
38 |
HM514258AJP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
39 |
HM514258AJP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
40 |
HM514258AJP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
41 |
HM514258AJP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
42 |
HM514258AJP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
43 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
44 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
45 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
46 |
HM514258AP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
47 |
HM514258AP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
48 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
49 |
HM514258AZP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
50 |
HM514258AZP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
51 |
HM514258AZP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
52 |
HM514258AZP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
53 |
HYB514256B |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
54 |
HYB514256B-50 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
55 |
HYB514256B-60 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
56 |
HYB514256B-70 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
57 |
HYB514256BJ-50 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
58 |
HYB514256BJ-60 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
59 |
HYB514256BJ-70 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
60 |
HYB514256BJL-50 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
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