| No. |
Part Name |
Description |
Manufacturer |
| 31 |
24VL014H/P |
Memory |
Microchip |
| 32 |
24VL014H/SN |
Memory |
Microchip |
| 33 |
24VL014H/ST |
Memory |
Microchip |
| 34 |
24VL014HT/MNY |
Memory |
Microchip |
| 35 |
24VL014HT/MS |
Memory |
Microchip |
| 36 |
24VL014HT/SN |
Memory |
Microchip |
| 37 |
24VL014HT/ST |
Memory |
Microchip |
| 38 |
78SR114HC |
1.5 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR |
Texas Instruments |
| 39 |
ACS14HMSR-03 |
Radiation Hardened Hex Inverting Schmitt Trigger |
Intersil |
| 40 |
AME8814HEEY |
300mA CMOS LDO |
AME |
| 41 |
AP2114H-1.2TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
| 42 |
AP2114H-1.8TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
| 43 |
AP2114H-2.5TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
| 44 |
AP2114H-3.3TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
| 45 |
AP2114HA-1.2TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
| 46 |
AP2114HA-1.8TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
| 47 |
AP2114HA-2.5TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
| 48 |
AP2114HA-3.3TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
| 49 |
APE1014H |
PE-relay. The slim power relay. 1 form A. Coil voltage 4.5 V DC. Silver alloy with Au-plated. Single contact. |
Matsushita Electric Works(Nais) |
| 50 |
APE3014H |
PE-relay. The slim power relay. 1 form C. Coil voltage 4.5 V DC. Silver alloy with Au-plated. Single contact. |
Matsushita Electric Works(Nais) |
| 51 |
APT4014HVR |
POWER MOS V 400V 28A 0.140 Ohm |
Advanced Power Technology |
| 52 |
AQV214H |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
| 53 |
AQV214HA |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
| 54 |
AQV214HAX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 55 |
AQV214HAZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 56 |
ARX114H |
RX-relay. Small micro wave relay. 1 form C. 1 coil latching type. Nominal voltage 4.5 V DC. |
Matsushita Electric Works(Nais) |
| 57 |
BAT15-014H |
HiRel Silicon schottky diode |
Siemens |
| 58 |
BAT15-114H |
HiRel Silicon schottky diode |
Siemens |
| 59 |
BQ2014H |
NiCd/NiMH Gas Gauge With High-Speed 1-Wire (HDQ) Interface And 5 LED Drivers |
Texas Instruments |
| 60 |
BQ2014HSN |
NiCd/NiMH Gas Gauge With High-Speed 1-Wire (HDQ) Interface And 5 LED Drivers |
Texas Instruments |
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