| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CS611416 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 32 |
CS611416A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 33 |
CS611616 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 34 |
CS611616A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 35 |
FST160100 |
160 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
| 36 |
FST16020 |
160 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
| 37 |
FST16030 |
160 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
| 38 |
FST16035 |
160 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
| 39 |
FST16040 |
160 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
| 40 |
FST16045 |
160 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
| 41 |
FST16060 |
160 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
| 42 |
FST16080 |
160 Amp Rectifier 20 to 100 Volts Schottky Barrier |
Micro Commercial Components |
| 43 |
IRF9383M |
A -30V Single P-Channel HEXFET Power MOSFET in a DirectFET MX package rated at -160 amperes optimized with low on resistance. |
International Rectifier |
| 44 |
IRF9383MTR1PBF |
A -30V Single P-Channel HEXFET Power MOSFET in a DirectFET MX package rated at -160 amperes optimized with low on resistance. |
International Rectifier |
| 45 |
PSMN1R6-30MLH |
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology |
Nexperia |
| 46 |
STB270N4F3 |
N-channel 40 V, 1.6 mOhm typ., 160 A STripFET(TM) III PowerMOSFET in D2PAK package |
ST Microelectronics |
| 47 |
STI270N4F3 |
N-channel 40 V, 2.1 mOhm typ., 160 A STripFET(TM) III PowerMOSFET in I2PAK package |
ST Microelectronics |
| 48 |
STI300N4F6 |
N-channel 40 V, 1.7 mOhm, 160 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in a I2PAK package |
ST Microelectronics |
| 49 |
STL160NS3LLH7 |
N-channel 30 V, 0.0016 Ohm typ., 160 A STripFET H7 Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 50 |
STP160N3LL |
N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
| 51 |
STP165N10F4 |
N-channel 100 V, 4.1 mO, 160 A TO-220, H�PAK STripFET?2;2; DeepGATE?2;2; Power MOSFET |
ST Microelectronics |
| 52 |
T158N1000 |
160 AMPS 1000V THYRISTOR |
IPRS Baneasa |
| 53 |
T158N1100 |
160 AMPS 1100V THYRISTOR |
IPRS Baneasa |
| 54 |
T158N1200 |
160 AMPS 1200V THYRISTOR |
IPRS Baneasa |
| 55 |
T158N1400 |
160 AMPS 1400V THYRISTOR |
IPRS Baneasa |
| 56 |
T158N1600 |
160 AMPS 1600V THYRISTOR |
IPRS Baneasa |
| 57 |
T158N1800 |
160 AMPS 1800V THYRISTOR |
IPRS Baneasa |
| 58 |
T158N400 |
160 AMPS 400V THYRISTOR |
IPRS Baneasa |
| 59 |
T158N600 |
160 AMPS 600V THYRISTOR |
IPRS Baneasa |
| 60 |
T158N800 |
160 AMPS 800V THYRISTOR |
IPRS Baneasa |
| | | |
