No. |
Part Name |
Description |
Manufacturer |
31 |
K4F661612B-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
32 |
K4F661612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
33 |
K4F661612B-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
34 |
K4F661612B-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
35 |
K4F661612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
36 |
K4F661612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
37 |
K4F661612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
38 |
MP1612B |
High-current, germanium PNP power transistor developed specially for high-speed, high-frequency applications |
Motorola |
39 |
WED9LC6416V1612BC |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
40 |
WED9LC6416V1612BI |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
41 |
WED9LC6816V1612BC |
256K X 32 SSRAM/ 4M X 32 SDRAM |
White Electronic Designs |
42 |
WED9LC6816V1612BI |
256K X 32 SSRAM/ 4M X 32 SDRAM |
White Electronic Designs |
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