No. |
Part Name |
Description |
Manufacturer |
31 |
K4E661612C-TC50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
32 |
K4E661612C-TC60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
33 |
K4E661612C-TL45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
34 |
K4E661612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
35 |
K4E661612C-TL60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
36 |
K4F641612C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
37 |
K4F641612C-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
38 |
K4F641612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
39 |
K4F641612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
40 |
K4F641612C-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
41 |
K4F641612C-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
42 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
43 |
K4F641612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
44 |
K4F641612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
45 |
K4F661612C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
46 |
K4F661612C-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
47 |
K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
48 |
K4F661612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
49 |
K4F661612C-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
50 |
K4F661612C-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
51 |
K4F661612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
52 |
K4F661612C-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
53 |
K4F661612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
54 |
R9G21612CS |
1600V, 1200A fast recovery single diode |
Powerex Power Semiconductors |
55 |
SL1612C |
(SL1611C/SL1611C) RF / IF Amplifiers |
GEC Plessey Semiconductors |
56 |
SL1612C |
RF/IF Amplifier |
PLESSEY Semiconductors |
57 |
SM1612C |
Transient Voltage Suppressor |
Microsemi |
58 |
SM1612C |
12.0V; 500Watt; standard capacitance TVS array. For wireless communication circuits, RS-232/422/423, portable electronics |
Protek Devices |
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