| No. |
Part Name |
Description |
Manufacturer |
| 31 |
E8311A |
Pulse Pattern Generator, 165 MHz VXI C-1 |
Agilent (Hewlett-Packard) |
| 32 |
HSMF-C165 |
HSMF-C165 · Miniature Bi-Color Surface Mount chipLED |
Agilent (Hewlett-Packard) |
| 33 |
HUF76609D3 |
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET� Power MOSFET |
Fairchild Semiconductor |
| 34 |
HUF76609D3 |
10A/ 100V/ 0.165 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Intersil |
| 35 |
HUF76609D3S |
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET� Power MOSFET |
Fairchild Semiconductor |
| 36 |
HUF76609D3S |
10A/ 100V/ 0.165 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Intersil |
| 37 |
HUF76609D3ST |
10A,100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 38 |
HUFA76609D3 |
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET� Power MOSFET |
Fairchild Semiconductor |
| 39 |
HUFA76609D3S |
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET� Power MOSFET |
Fairchild Semiconductor |
| 40 |
HUFA76609D3ST |
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 41 |
ISPLSI5256VE-165LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
| 42 |
ISPLSI5256VE-165LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
| 43 |
ISPLSI5256VE-165LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
| 44 |
ISPLSI5256VE-165LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
| 45 |
MAX2165EVKIT |
MAX2165 Evaluation Kit |
MAXIM - Dallas Semiconductor |
| 46 |
MAX2165EVKIT+ |
MAX2165 Evaluation Kit |
MAXIM - Dallas Semiconductor |
| 47 |
MT9122 |
Dual Voice Echo Canceller (ITU-T G165 compliant) with disable Tone Detection |
Zarlink Semiconductor |
| 48 |
MT9123 |
Dual Voice Echo Canceller ( ITU-T G165 compliant) |
Zarlink Semiconductor |
| 49 |
P4KE150C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 135 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 50 |
P6KE150C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 135.0 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 51 |
PTF10100 |
165 Watts, 860�900 MHz LDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 52 |
PTF10161 |
165 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 53 |
STEVAL-TDR016V1 |
30 W, 155 - 165 MHz evaluation board based on PD55015-E |
ST Microelectronics |
| 54 |
TFP401APZPG4 |
165 MHz PanelBus? TMDS DVI Receiver/De-Serializer with HSYNC 100-HTQFP 0 to 70 |
Texas Instruments |
| 55 |
TFP401PZPG4 |
165 MHz PanelBus? TMDS DVI Receiver/Deserializer 100-HTQFP 0 to 70 |
Texas Instruments |
| 56 |
TFP410PAPG4 |
165 MHz PanelBus? TMDS DVI Transmitter/Serializer 64-HTQFP 0 to 70 |
Texas Instruments |
| 57 |
TFP513 |
TI PanelBus DVI Transmitter 165 MHz plus HDCP and embedded HDCP keys |
Texas Instruments |
| 58 |
TFP513PAP |
TI PanelBus DVI Transmitter 165 MHz plus HDCP and embedded HDCP keys |
Texas Instruments |
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