No. |
Part Name |
Description |
Manufacturer |
31 |
DS1669S-100+T&R |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
32 |
DS1669S-50 |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
33 |
DS1669S-50+ |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
34 |
DS1669S-50+T&R |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
35 |
DS1669S-50/T&R |
Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
36 |
K4R271669A |
Direct RDRAM |
Samsung Electronic |
37 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
38 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
39 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
40 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
41 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
42 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
43 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
44 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
45 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
46 |
K4R271669B |
Direct RDRAM |
Samsung Electronic |
47 |
K4R271669B |
Direct RDRAM� Data Sheet |
Samsung Electronic |
48 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
49 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
50 |
K4R271669B-MCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
51 |
K4R271669B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
52 |
K4R271669B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
53 |
K4R271669B-NB(M)CCK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
54 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
55 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
56 |
K4R271669B-NCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz |
Samsung Electronic |
57 |
K4R271669D |
Direct RDRAM� Data Sheet |
Samsung Electronic |
58 |
K4R271669D-T |
128Mbit RDRAM(D-die) |
Samsung Electronic |
59 |
K4R271669D-TCS8 |
128Mbit RDRAM(D-die) |
Samsung Electronic |
60 |
K4R271669E |
128Mbit RDRAM(E-die) |
Samsung Electronic |
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