Datasheets for 1669

Datasheets found :: 108 Page: | 1 | 2 | 3 | 4 |

No.	Part Name	Description	Manufacturer
31	DS1669S-50+	Dallastat Electronic Digital Rheostat	MAXIM - Dallas Semiconductor
32	DS1669S-50+T&R	Dallastat Electronic Digital Rheostat	MAXIM - Dallas Semiconductor
33	DS1669S-50/T&R	Dallastat Electronic Digital Rheostat	MAXIM - Dallas Semiconductor
34	K4R271669A	Direct RDRAM	Samsung Electronic
35	K4R271669A-N(M)CK7	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
36	K4R271669A-N(M)CK8	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
37	K4R271669A-NB(M)CCG6	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
38	K4R271669AM-CG6	256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung Electronic
39	K4R271669AM-CK7	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
40	K4R271669AM-CK8	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
41	K4R271669AN-CG6	256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz.	Samsung Electronic
42	K4R271669AN-CK7	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
43	K4R271669AN-CK8	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
44	K4R271669B	Direct RDRAM	Samsung Electronic
45	K4R271669B	Direct RDRAM� Data Sheet	Samsung Electronic
46	K4R271669B-MCG6	256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
47	K4R271669B-MCK7	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung Electronic
48	K4R271669B-MCK8	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic
49	K4R271669B-N(M)CG6	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
50	K4R271669B-N(M)CK7	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
51	K4R271669B-NB(M)CCK8	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
52	K4R271669B-NCG6	256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
53	K4R271669B-NCK7	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz	Samsung Electronic
54	K4R271669B-NCK8	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz	Samsung Electronic
55	K4R271669D	Direct RDRAM� Data Sheet	Samsung Electronic
56	K4R271669D-T	128Mbit RDRAM(D-die)	Samsung Electronic
57	K4R271669D-TCS8	128Mbit RDRAM(D-die)	Samsung Electronic
58	K4R271669E	128Mbit RDRAM(E-die)	Samsung Electronic
59	K4R271669F	128Mbit RDRAM(F-die)	Samsung Electronic
60	K4R441869A-N(M)	K4R271669A-N(M):Direct RDRAM� Data Sheet	Samsung Electronic

Datasheets found :: 108 Page: | 1 | 2 | 3 | 4 |