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Datasheets for 16C10

Datasheets found :: 68
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
31 KM416C1004BJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
32 KM416C1004BJ-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
33 KM416C1004BT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
34 KM416C1004BT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
35 KM416C1004BT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
36 KM416C1004BT-7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
37 KM416C1004BT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
38 KM416C1004BT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
39 KM416C1004BT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
40 KM416C1004BT-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
41 KM416C1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
42 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
43 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
44 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
45 KM416C1004CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
46 KM416C1004CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
47 KM416C1004CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
48 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
49 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
50 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
51 KM416C1004CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
52 KM416C1004CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
53 KM416C1004CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
54 KM416C1004CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
55 KM416C1004CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
56 KM416C1004CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
57 KM416C1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
58 KM416C1004CTL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
59 KM416C1004CTL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
60 M58LR016C100ZC6T 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory SGS Thomson Microelectronics


Datasheets found :: 68
Page: | 1 | 2 | 3 |



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