No. |
Part Name |
Description |
Manufacturer |
31 |
AGM1616B-FEBBS-T |
0.3-7.0V; 17.5mA; number of dots: 160 x 160dots; dot size:0.335 x 0.335mm; dot pitch:0.350 x 0.350mm; AZ display |
AZ Displays |
32 |
AGM1616B-FEFBD-T |
0.3-7.0V; 17.5mA; number of dots: 160 x 160dots; dot size:0.335 x 0.335mm; dot pitch:0.350 x 0.350mm; AZ display |
AZ Displays |
33 |
AGM1616B-FEFBS-T |
0.3-7.0V; 17.5mA; number of dots: 160 x 160dots; dot size:0.335 x 0.335mm; dot pitch:0.350 x 0.350mm; AZ display |
AZ Displays |
34 |
AGM1616B-FEGBD-T |
0.3-7.0V; 17.5mA; number of dots: 160 x 160dots; dot size:0.335 x 0.335mm; dot pitch:0.350 x 0.350mm; AZ display |
AZ Displays |
35 |
AGM1616B-FEGBS-T |
0.3-7.0V; 17.5mA; number of dots: 160 x 160dots; dot size:0.335 x 0.335mm; dot pitch:0.350 x 0.350mm; AZ display |
AZ Displays |
36 |
AGM1616B-FEYBD-T |
0.3-7.0V; 17.5mA; number of dots: 160 x 160dots; dot size:0.335 x 0.335mm; dot pitch:0.350 x 0.350mm; AZ display |
AZ Displays |
37 |
AGM1616B-FEYBS-T |
0.3-7.0V; 17.5mA; number of dots: 160 x 160dots; dot size:0.335 x 0.335mm; dot pitch:0.350 x 0.350mm; AZ display |
AZ Displays |
38 |
AMMC-5033 |
AMMC-5033 · 17.7-32 GHz Power Amplifier |
Agilent (Hewlett-Packard) |
39 |
APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm |
Advanced Power Technology |
40 |
APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm |
Advanced Power Technology |
41 |
APT6040BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm |
Advanced Power Technology |
42 |
APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm |
Advanced Power Technology |
43 |
AR1104S29 |
2900 V, 1680 A, 17.9 kA rectifier diode |
POSEICO SPA |
44 |
ATV15CJ200A-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=17.1V, Tolerance=10% |
Comchip Technology |
45 |
ATV15CJ200CA-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=17.1V, Tolerance=5% |
Comchip Technology |
46 |
BZW06-17 |
Diode TVS Single Uni-Dir 17.1V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
47 |
BZW06-17B |
Diode TVS Single Bi-Dir 17.1V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
48 |
BZX79C18 |
Diode Zener Single 17.95V 5% 500mW 2-Pin ALF |
New Jersey Semiconductor |
49 |
BZY91C18 |
Diode Zener Single 17.95V 6% 100W 2-Pin DO-5 |
New Jersey Semiconductor |
50 |
BZY91C185 |
Diode Zener Single 17.95V 6% 100W 2-Pin DO-5 |
New Jersey Semiconductor |
51 |
BZY91C18R |
Diode Zener Single 17.95V 6% 100W 2-Pin DO-5 |
New Jersey Semiconductor |
52 |
BZY93C18 |
Diode Zener Single 17.95V 6% 20W 2-Pin DO-4 |
New Jersey Semiconductor |
53 |
BZY93C180 |
Diode Zener Single 17.95V 6% 20W 2-Pin DO-4 |
New Jersey Semiconductor |
54 |
BZY93C18R |
Diode Zener Single 17.95V 6% 20W 2-Pin DO-4 |
New Jersey Semiconductor |
55 |
C405-XB290-E400-A |
17.0mW; color:UV; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
56 |
C405-XB290-E400-B |
17.0mW; color:UV; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
57 |
CA2850R |
Wideband Linear Amplifier 17.5dB, 40-100MHz 320mW |
Motorola |
58 |
CA2850RH |
Wideband Linear Amplifier 17.5dB, 40-100MHz 320mW |
Motorola |
59 |
CA2851R |
Wideband Linear Amplifier 17.5dB, 40-100MHz 320mW |
Motorola |
60 |
CA2885 |
Wideband Linear Amplifier 17.7dB, 40-550MHz 2W |
Motorola |
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