| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BZW04-171B |
200 V, 1 mA, 400 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 32 |
BZW04-171B |
Glass Passivated Junction Transient Voltage Suppressor |
General Semiconductor |
| 33 |
BZW04-171B |
TRANSIL |
SGS Thomson Microelectronics |
| 34 |
BZW04-171B |
TRANSILTM |
ST Microelectronics |
| 35 |
BZW04-171B |
Discrete Devices -Diode-TVS |
Taiwan Semiconductor |
| 36 |
BZW04P171B |
Glass Passivated Junction Transient Voltage Suppressor |
General Semiconductor |
| 37 |
BZW06-171B |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 171V |
Fagor |
| 38 |
BZW06-171B |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 171V |
SGS Thomson Microelectronics |
| 39 |
BZW06-171B |
TRANSIL |
ST Microelectronics |
| 40 |
BZW06-171B |
Discrete Devices -Diode-TVS |
Taiwan Semiconductor |
| 41 |
FU-68PDF-V510M171B |
1.58 um (L-Band) DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 42 |
FU-68PDF-V520M171B |
1.58 um (L-Band) DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 43 |
FU-68SDF-V802M171B |
1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 44 |
FU-68SDF-V810M171B |
1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 45 |
HC55171B |
Low Cost 5 REN Ringing SLIC for ISDN Modem/TA and WL |
Intersil |
| 46 |
HC55171BIB |
Low Cost 5 REN Ringing SLIC for ISDN Modem/TA and WL |
Intersil |
| 47 |
HC55171BIM |
Low Cost 5 REN Ringing SLIC for ISDN Modem/TA and WL |
Intersil |
| 48 |
HYB314171BJ-50 |
256k x 16 Bit FPM DRAM 3.3 V 50 ns |
Infineon |
| 49 |
HYB314171BJ-50 |
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 50 |
HYB314171BJ-50 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 51 |
HYB314171BJ-50 |
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 52 |
HYB314171BJ-50 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 53 |
HYB314171BJ-60 |
256k x 16 Bit FPM DRAM 3.3 V 60 ns |
Infineon |
| 54 |
HYB314171BJ-60 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 55 |
HYB314171BJ-70 |
256k x 16 Bit FPM DRAM 3.3 V 70 ns |
Infineon |
| 56 |
HYB314171BJ-70 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 57 |
HYB314171BJL-50 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 58 |
HYB314171BJL-60 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 59 |
HYB314171BJL-70 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 60 |
HYB514171BJ-50 |
256k x 16 Bit FPM DRAM 5 V 50 ns |
Infineon |
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