| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N4172B |
Zener Diode 27V 1W |
Motorola |
| 32 |
1N4172B |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 33 |
1N4172B |
ZENER DIODES |
Unknow |
| 34 |
1N5172 |
Rectifier Diode 100V 2A |
Motorola |
| 35 |
1N6172 |
Transient Voltage Suppressor |
Microsemi |
| 36 |
1N6172 |
Diode TVS Single Bi-Dir 136.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 37 |
1N6172 |
1500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS |
Semtech |
| 38 |
1N6172A |
Transient Voltage Suppressor |
Microsemi |
| 39 |
1N6172A |
Diode TVS Single Bi-Dir 136.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 40 |
1N6172A |
QPL 1500 Watt Axial Leaded TVS |
Semtech |
| 41 |
1N6172Ae3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 42 |
1N6172AUS |
Transient Voltage Suppressor |
Microsemi |
| 43 |
1N6172AUSe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 44 |
1N6172e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 45 |
1N6172US |
Transient Voltage Suppressor |
Microsemi |
| 46 |
1N6172USe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 47 |
1S1721 |
Mixer Diode |
TOSHIBA |
| 48 |
1S1722 |
Mixer Diode |
TOSHIBA |
| 49 |
1SV172 |
Diode Silicon Epitaxial Pin Type |
TOSHIBA |
| 50 |
2-OA1172 |
HF germanium pair diode for discriminator and radio detector circuits |
TUNGSRAM |
| 51 |
2082-6172-06 |
2 Watt, DC-4 GHz, Fixed coaxial attenuator |
MA-Com |
| 52 |
2082-6172-06 |
Fixed Coaxial Attenuators |
Tyco Electronics |
| 53 |
20KP172 |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 54 |
20KP172A |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 55 |
20KP172C |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 56 |
20KP172CA |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 57 |
20KW172 |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 58 |
20KW172 |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 59 |
20KW172A |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 60 |
20KW172A |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
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