| No. |
Part Name |
Description |
Manufacturer |
| 31 |
K4C89163AF-ACFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 32 |
K4C89163AF-AIF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 33 |
K4C89163AF-AIF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 34 |
K4C89163AF-AIFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 35 |
K4C89163AF-GCF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 36 |
K4C89163AF-GCF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 37 |
K4C89163AF-GCFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 38 |
K4C89163AF-GIF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 39 |
K4C89163AF-GIF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 40 |
K4C89163AF-GIFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 41 |
K4C89183AF |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 42 |
K4C89183AF-ACF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 43 |
K4C89183AF-ACF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 44 |
K4C89183AF-ACFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 45 |
K4C89183AF-AIF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 46 |
K4C89183AF-AIFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 47 |
K4C89183AF-GCF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 48 |
K4C89183AF-GCF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 49 |
K4C89183AF-GCFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 50 |
K4C89183AF-GIF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 51 |
K4C89183AF-GIF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 52 |
K4C89183AF-GIFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
| 53 |
NX8560LJ381-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1538.18 nm. Frequency 194.90 THz. FC-UPC connector. |
NEC |
| 54 |
NX8560LJ381-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1538.18 nm. Frequency 194.90 THz. SC-UPC connector. |
NEC |
| 55 |
NX8560SJ465-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1546.518 nm. Frequency 193.85 THz. FC-UPC connector. |
NEC |
| 56 |
NX8560SJ465-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1546.518 nm. Frequency 193.85 THz. SC-UPC connector. |
NEC |
| 57 |
NX8560SJ509-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1550.918 nm. Frequency 193.30 THz. FC-UPC connector. |
NEC |
| 58 |
NX8560SJ509-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1550.918 nm. Frequency 193.30 THz. SC-UPC connector. |
NEC |
| 59 |
NX8562LB381-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1538.18 nm. Frequency 194.90 THz. Anode ground. FC-PC connector. |
NEC |
| 60 |
NX8562LB811-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1581.18 nm. Frequency 189.60 THz. Anode ground. FC-PC connector. |
NEC |
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