| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CY7C2565XV18-600BZC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 32 |
CY7C2565XV18-600BZXC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 33 |
CY7C2565XV18-633BZC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 34 |
CY7C2565XV18-633BZXC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 35 |
CY7C2568XV18-600BZXC |
72-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 36 |
CY7C2568XV18-633BZXC |
72-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 37 |
CY7C2570XV18-600BZXC |
72-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 38 |
CY7C2570XV18-633BZXC |
72-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 39 |
GS880Z18-66 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
GSI Technology |
| 40 |
MAC218-6 |
TRIACs 8 AMPERES RMS 200 thru 800 VOLTS |
Motorola |
| 41 |
MAC218-6 |
Thyristor TRIAC 400V 100A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 42 |
MAC218-6FP |
ISOLATED TRIACs THYRISTORS 8 AMPERES RMS 200 thru 800 VOLTS |
Motorola |
| 43 |
MC3818-6 |
THYRISTOR PNPN 20A RMS, 400V |
Motorola |
| 44 |
MC3918-6 |
THYRISTOR PNPN 20A RMS, 400V |
Motorola |
| 45 |
MCR1718-6 |
Thyristor PNPN 1000 Ampere pulse, 400 Volts |
Motorola |
| 46 |
MCR218-6 |
Thyristor |
Motorola |
| 47 |
MCR218-6 |
Thyristor SCR 400V 100A 3-Pin(3+Tab) TO-220AB Bulk |
New Jersey Semiconductor |
| 48 |
MCR218-6 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 49 |
MCR218-6FP |
Silicon controlled rectifier |
Motorola |
| 50 |
MCR3818-6 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 400 V. |
Motorola |
| 51 |
MCR3918-6 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 400 V. |
Motorola |
| 52 |
PTB78520W |
20-A, 18-60-V Input Auto-Track Compatible Isolated DC/DC Converter |
Texas Instruments |
| 53 |
PTB78520WAD |
20-A, 18-60-V Input Auto-Track Compatible Isolated DC/DC Converter |
Texas Instruments |
| 54 |
PTB78520WAH |
20-A, 18-60-V Input Auto-Track Compatible Isolated DC/DC Converter |
Texas Instruments |
| 55 |
PTB78520WAS |
20-A, 18-60-V Input Auto-Track Compatible Isolated DC/DC Converter |
Texas Instruments |
| 56 |
SD1018-6 |
VHF 175MHz 12.5V 40W NPN RF Transistor |
SGS Thomson Microelectronics |
| 57 |
TDD122403S |
12 W DC/DC TDD modul with 18-60 V input, 3.3 V/3000 A output |
HN Electronic Components |
| 58 |
TDD122405S |
12 W DC/DC TDD modul with 18-60 V input, 5 V/2400 A output |
HN Electronic Components |
| 59 |
TDD122412D |
12 W DC/DC TDD modul with 18-60 V input, +/-12 V/+/-500 A output |
HN Electronic Components |
| 60 |
TDD122412S |
12 W DC/DC TDD modul with 18-60 V input, 12 V/1000 A output |
HN Electronic Components |
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