No. |
Part Name |
Description |
Manufacturer |
31 |
DS1869S-100+T&R |
3V Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
32 |
DS1869S-50 |
3V Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
33 |
DS1869S-50+ |
3V Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
34 |
DS1869S-C04 |
3V Dallastat Electronic Digital Rheostat |
MAXIM - Dallas Semiconductor |
35 |
ENA1869 |
8-bit Microcontroller with 50K-byte Flash ROM and 1536-byte RAM |
ON Semiconductor |
36 |
ES1869 |
AudioDrive Solution |
ESS Technology |
37 |
ES1869F |
AudioDrive? Solution Product Brief |
ESS Technology |
38 |
K4R271869B-MCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
39 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
40 |
K4R271869B-MCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
41 |
K4R271869B-NCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
42 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
43 |
K4R271869B-NCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
44 |
K4R441869A |
Direct RDRAM |
Samsung Electronic |
45 |
K4R441869A-N(M) |
K4R271669A-N(M):Direct RDRAM� Data Sheet |
Samsung Electronic |
46 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
47 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
48 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
49 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
50 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
51 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
52 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
53 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
54 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
55 |
K4R441869B |
Direct RDRAM |
Samsung Electronic |
56 |
K4R441869B |
K4R271669B:Direct RDRAM� Data Sheet |
Samsung Electronic |
57 |
K4R441869B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
58 |
K4R441869B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
59 |
K4R441869B-N(M)CK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
60 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
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