| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MNDS26F32MJ/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 32 |
MNDS26F32MJR-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 33 |
MNDS26F32MJRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 34 |
MNDS26F32MW-QMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 35 |
MNDS26F32MW/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 36 |
MNDS26F32MWG/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 37 |
MNDS26F32MWGRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 38 |
MNDS26F32MWR-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 39 |
MNDS26F32MWRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 40 |
MNLM136A |
2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
National Semiconductor |
| 41 |
MNLM136A-2.5-X |
2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
National Semiconductor |
| 42 |
MNLM136A-2.5-X-RH |
2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
National Semiconductor |
| 43 |
MQF19.5-1200/03 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 44 |
PE1000BUV |
Germax focused xenon arc lamp. Power 1000 watts, current 51 amps (DC), operating voltage 19.5 volts (DC). |
PerkinElmer Optoelectronics |
| 45 |
SGA-3463 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 19.5 dB at 1950 MHz. |
Stanford Microdevices |
| 46 |
STB23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK |
ST Microelectronics |
| 47 |
STB25N80K5 |
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
| 48 |
STF23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP |
ST Microelectronics |
| 49 |
STF25N80K5 |
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 50 |
STL23NM60ND |
N-channel 600 V, 0.175 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 51 |
STP23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-220 |
ST Microelectronics |
| 52 |
STP25N80K5 |
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
| 53 |
STW23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247 |
ST Microelectronics |
| 54 |
STW25N80K5 |
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-247 package |
ST Microelectronics |
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