| No. |
Part Name |
Description |
Manufacturer |
| 31 |
FR1B-T3 |
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER |
Won-Top Electronics |
| 32 |
GS1B-T1 |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
Won-Top Electronics |
| 33 |
GS1B-T3 |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
Won-Top Electronics |
| 34 |
JA1B-TM-AC115V |
JA-relay. 1 horse-power compact power relay. 1 form B. Coil voltage 115 V AC. Solder terminal. Standard type. |
Matsushita Electric Works(Nais) |
| 35 |
JA1B-TM-AC115V-P |
JA-relay. 1 horse-power compact power relay. 1 form B. Coil voltage 115 V AC. Solder terminal. Up-grated contact rating type. |
Matsushita Electric Works(Nais) |
| 36 |
JA1B-TMP-AC115V |
JA-relay. 1 horse-power compact power relay. 1 form B. Coil voltage 115 V AC. Solder terminal and PCB terminal. Standard type. |
Matsushita Electric Works(Nais) |
| 37 |
JA1B-TMP-AC115V-P |
JA-relay. 1 horse-power compact power relay. 1 form B. Coil voltage 115 V AC. Solder terminal and PCB terminal. Up-grated contact rating type. |
Matsushita Electric Works(Nais) |
| 38 |
K4F640811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 39 |
K4F640811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 40 |
K4F640811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 41 |
K4F660811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 42 |
K4F660811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 43 |
K4F660811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 44 |
KSZ8721B-TR |
Ethernet PHYs |
Microchip |
| 45 |
MAX6319LHUK31B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 3.080V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 46 |
MAX6319LHUK41B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 4.100V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 47 |
MAX6319MHUK31B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 3.080V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 48 |
MAX6319MHUK41B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 4.100V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 49 |
MAX6322HPUK31B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 3.080V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 50 |
MAX6322HPUK41B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 4.100V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 51 |
MCL101B-TR |
Small Signal Schottky Barrier Diodes |
Vishay |
| 52 |
R1110N301B-TL |
LOW NOISE 150mA L.D.O REGULATOR |
Ricoh |
| 53 |
R1110N301B-TR |
LOW NOISE 150mA L.D.O REGULATOR |
Ricoh |
| 54 |
R1110N401B-TL |
LOW NOISE 150mA L.D.O REGULATOR |
Ricoh |
| 55 |
R1110N401B-TR |
LOW NOISE 150mA L.D.O REGULATOR |
Ricoh |
| 56 |
R1110N501B-TL |
LOW NOISE 150mA L.D.O REGULATOR |
Ricoh |
| 57 |
R1110N501B-TR |
LOW NOISE 150mA L.D.O REGULATOR |
Ricoh |
| 58 |
R1111N181B-TL |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| 59 |
R1111N181B-TR |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| 60 |
R1111N301B-TL |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| | | |
