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Datasheets for 1GH

Datasheets found :: 373
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 AT-01672 Up to 1GHz General Purpose NPN Silicon Bipolar Transistor AVANTEK
32 AT-41472 Up to 1GHz Low Noise NPN Silicon Bipolar Transistor AVANTEK
33 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
34 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
35 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
36 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
37 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
38 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
39 BF2030 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
40 BF2030W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
41 BF2040 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
42 BF2040W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
43 BF479 Epitaxial planar PNP transistor, intended for use as wide band linear amplifier up to 1GHz SGS-ATES
44 BF516 Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz SGS-ATES
45 BFP90A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
46 BFP91A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
47 BFP96 NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
48 BFR38 Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz SGS-ATES
49 BFR99 Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz SGS-ATES
50 BFR99A Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz SGS-ATES
51 BFS17 NPN 1GHz wideband transistor NXP Semiconductors
52 BFS17P NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
53 BFS17S NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
54 BFS17W NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
55 BFW92 Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz SGS-ATES
56 BFX89 Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz SGS-ATES
57 BFY90 Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz SGS-ATES
58 CC1100E Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands Texas Instruments
59 CC1100ERGPR Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Texas Instruments
60 CC1100ERGPT Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Texas Instruments


Datasheets found :: 373
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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