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Datasheets for 1GH

Datasheets found :: 367
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
32 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
33 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
34 BF2030 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
35 BF2030W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
36 BF2040 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
37 BF2040W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
38 BF479 Epitaxial planar PNP transistor, intended for use as wide band linear amplifier up to 1GHz SGS-ATES
39 BF516 Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz SGS-ATES
40 BFP90A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
41 BFP91A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
42 BFP96 NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
43 BFR38 Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz SGS-ATES
44 BFR99 Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz SGS-ATES
45 BFR99A Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz SGS-ATES
46 BFS17 NPN 1GHz wideband transistor NXP Semiconductors
47 BFS17P NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
48 BFS17S NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
49 BFS17W NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
50 BFW92 Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz SGS-ATES
51 BFX89 Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz SGS-ATES
52 BFY90 Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz SGS-ATES
53 CC1100E Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands Texas Instruments
54 CC1100ERGPR Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Texas Instruments
55 CC1100ERGPT Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Texas Instruments
56 CC1101 Low-Power Sub-1GHz RF Transceiver Texas Instruments
57 CC1101RGP Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 Texas Instruments
58 CC1101RGPR Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 Texas Instruments
59 CC1101RGPT Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 Texas Instruments
60 CC1110F16 Sub-1GHz System-on-Chip with MCU and 16kB Flash memory Texas Instruments


Datasheets found :: 367
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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