| No. |
Part Name |
Description |
Manufacturer |
| 31 |
FEC40-12S1P5 |
OFFER SINGLE,DUAL,DUAL POSITIVE(TOTAL OUTPUT CURRENT 8A)AND TRIPLE OUTPUT |
Power Mate Technology |
| 32 |
FED20-24S1P5 |
20WATTS DC-DC CONVERTER |
Power Mate Technology |
| 33 |
FED20-48S1P5 |
20WATTS DC-DC CONVERTER |
Power Mate Technology |
| 34 |
FQB1P50 |
500V P-Channel MOSFET |
Fairchild Semiconductor |
| 35 |
FQB1P50TM |
500V P-Channel QFET |
Fairchild Semiconductor |
| 36 |
FQD1P50 |
500V P-Channel MOSFET |
Fairchild Semiconductor |
| 37 |
FQD1P50TF |
500V P-Channel QFET |
Fairchild Semiconductor |
| 38 |
FQD1P50TM |
500V P-Channel QFET |
Fairchild Semiconductor |
| 39 |
FQI1P50 |
500V P-Channel MOSFET |
Fairchild Semiconductor |
| 40 |
FQI1P50TU |
500V P-Channel QFET |
Fairchild Semiconductor |
| 41 |
FQP1P50 |
500V P-Channel MOSFET |
Fairchild Semiconductor |
| 42 |
FQPF1P50 |
500V P-Channel MOSFET |
Fairchild Semiconductor |
| 43 |
FQU1P50 |
500V P-Channel MOSFET |
Fairchild Semiconductor |
| 44 |
IXTH11P50 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
IXYS Corporation |
| 45 |
IXTT11P50 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
IXYS Corporation |
| 46 |
KT861P51 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01 |
Optek Technology |
| 47 |
KT861P55 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 |
Optek Technology |
| 48 |
KT871P51 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches |
Optek Technology |
| 49 |
KT871P55 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches |
Optek Technology |
| 50 |
LM3S1P51 |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 51 |
LM3S1P51-IBZ80-C5 |
Stellaris LM3S Microcontroller 108-NFBGA -40 to 85 |
Texas Instruments |
| 52 |
LM3S1P51-IBZ80-C5T |
Stellaris LM3S Microcontroller 108-NFBGA -40 to 85 |
Texas Instruments |
| 53 |
LM3S1P51-IQC80-C5 |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 54 |
LM3S1P51-IQC80-C5T |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 55 |
LT1P51A |
3.3x2.9mm, 1.1mm Thickness, Colored Diffusion Chip LED Devices |
SHARP |
| 56 |
LT1P53A |
3.3x2.9mm, 1.1mm Thickness, Milky Diffusion Chip LED Devices |
SHARP |
| 57 |
M1P5 |
MEDIUM CURRENT SILICON RECTIFIERS |
etc |
| 58 |
MSAFX11P50A |
P Channel MOSFET |
Microsemi |
| 59 |
MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
Motorola |
| 60 |
OPB461P51 |
Photologic slotted optical switch |
Optek Technology |
| | | |
