| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1S423R |
Diffused silicon rectifier 10A 400V, reverse polarity |
Texas Instruments |
| 32 |
1S425 |
Diffused silicon rectifier 10A 600V |
Texas Instruments |
| 33 |
1S425R |
Diffused silicon rectifier 10A 600V, reverse polarity |
Texas Instruments |
| 34 |
1S427 |
Diffused silicon rectifier 10A 800V |
Texas Instruments |
| 35 |
1S427R |
Diffused silicon rectifier 10A 800V, reverse polarity |
Texas Instruments |
| 36 |
1S48 |
Variable capacitance diode |
TOSHIBA |
| 37 |
1S49 |
Variable capacitance diode |
TOSHIBA |
| 38 |
ARF671S45 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 39 |
ARF681S45 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 40 |
AS91L1001S40F100C |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 41 |
AS91L1001S40F100CF |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 42 |
AS91L1001S40F100I |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 43 |
AS91L1001S40F100IF |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 44 |
AS91L1001S40F100IG |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 45 |
AS91L1001S40L100C |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 46 |
AS91L1001S40L100CF |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 47 |
AS91L1001S40L100CG |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 48 |
AS91L1001S40L100I |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 49 |
AS91L1001S40L100IF |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 50 |
AS91L1001S40L100IG |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 51 |
AT671S45 |
PHASE CONTROL THYRISTOR |
POSEICO SPA |
| 52 |
B461G |
Reverb button circuit, possibly equivalent SAS261S4 |
RFT |
| 53 |
GP1S44S1 |
Transmissive Type Photointerrupter with Actuator |
SHARP |
| 54 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 55 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 56 |
HM51S4260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 57 |
HM51S4260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 58 |
HM51S4260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 59 |
HM51S4260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 60 |
HM51S4260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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