| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1SS231 |
Silicon Switching Diode |
NEC |
| 32 |
1SS232 |
Silicon Switching Diode |
NEC |
| 33 |
1SS233 |
Silicon Switching Diode |
NEC |
| 34 |
1SS234 |
Silicon Switching Diode |
NEC |
| 35 |
1SS235 |
Silicon Switching Diode |
NEC |
| 36 |
1SS236 |
Silicon Switching Diode |
NEC |
| 37 |
1SS237 |
UHF Detector & Mixer Diode |
NEC |
| 38 |
1SS237(1) |
UHF Detector & Mixer Diode |
NEC |
| 39 |
1SS244 |
SWITCHING DIODES |
Micro Commercial Components |
| 40 |
1SS244 |
Diodes > Switching Diodes > Leaded type |
ROHM |
| 41 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 42 |
1SS265 |
35 V, band switching diode |
Leshan Radio Company |
| 43 |
1SS265 |
SWITCHING DIODES |
Micro Commercial Components |
| 44 |
1SS268 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 45 |
1SS269 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 46 |
1SS270 |
Small Signal |
Hitachi Semiconductor |
| 47 |
1SS270 |
SWITCHING DIODES |
Leshan Radio Company |
| 48 |
1SS270 |
Diodes>Switching |
Renesas |
| 49 |
1SS270A |
Small Signal |
Hitachi Semiconductor |
| 50 |
1SS270A |
Diodes>Switching |
Renesas |
| 51 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
| 52 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 53 |
1SS286 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 54 |
1SS286 |
Diodes>Switching |
Renesas |
| 55 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 56 |
1SS294 |
SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 57 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 58 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| | | |
