No. |
Part Name |
Description |
Manufacturer |
31 |
1N5927 |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
32 |
1N5927A |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
33 |
1N5927C |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
34 |
1N5927D |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
35 |
1N968A |
20 V, 6.2 mA, silicon planar zener diode |
Honey Technology |
36 |
1N968B |
20 V, 6.2 mA, silicon planar zener diode |
Honey Technology |
37 |
1N970A |
24 V, 5.2 mA, silicon planar zener diode |
Honey Technology |
38 |
1N970B |
24 V, 5.2 mA, silicon planar zener diode |
Honey Technology |
39 |
1N972A |
30 V, 4.2 mA, silicon planar zener diode |
Honey Technology |
40 |
1N972B |
30 V, 4.2 mA, silicon planar zener diode |
Honey Technology |
41 |
1N975A |
39 V, 3.2 mA, silicon planar zener diode |
Honey Technology |
42 |
1N975B |
39 V, 3.2 mA, silicon planar zener diode |
Honey Technology |
43 |
2722 162 02992 |
VHF Narrow-BAND Circulators/Isolators, frequency range 161 to 162 MHz |
Philips |
44 |
27C020 |
2 Megabit (256 K x 8-Bit) CMOS EPROM |
Advanced Micro Devices |
45 |
28F016SA |
28F016SA 16-MBIT (1 MBIT X 16 / 2 MBIT X 8)FlashFile MEMORY |
Intel |
46 |
28F016SA 16-MBIT |
(1 MBIT X 16, 2 MBIT X 8) FlashFile MEMORY |
Intel |
47 |
28F016SV |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
Intel |
48 |
28F016XS |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
Intel |
49 |
29C021JC-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
50 |
29C021JC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
51 |
29C021JC-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
52 |
29C021JC-2 |
High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
53 |
29C021JC-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
54 |
29C021JC-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
55 |
29C021JI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
56 |
29C021JI-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
57 |
29C021JI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
58 |
29C021JI-2 |
High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
59 |
29C021JI-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
60 |
29C021JI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
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