No. |
Part Name |
Description |
Manufacturer |
31 |
272.002 |
Axial Lead and Cartridge Fuses |
Littelfuse |
32 |
272.003 |
Axial Lead and Cartridge Fuses |
Littelfuse |
33 |
272.004 |
Axial Lead and Cartridge Fuses |
Littelfuse |
34 |
272.005 |
Axial Lead and Cartridge Fuses |
Littelfuse |
35 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
36 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
37 |
2N6726 |
0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE |
Continental Device India Limited |
38 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
39 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
40 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
41 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
42 |
3425L200DR |
Resettable PTC. Ihold = 2.00A, Itrip = 4.0, Vmax = 15Vdc. Reel quantity 1500. |
Littelfuse |
43 |
APT1002R4BN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm |
Advanced Power Technology |
44 |
APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm |
Advanced Power Technology |
45 |
APT1002RCN |
POWER MOS IV 1000V 5.5A 2.00 Ohm |
Advanced Power Technology |
46 |
AV102-12 |
HIP3 Variable Attenuator 1.70�2.00 GHz |
Alpha Industries Inc |
47 |
AV102-12 |
HIP3 Variable Attenuator 1.70-2.00 GHz |
Skyworks Solutions |
48 |
BD233 |
25.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
49 |
BD234 |
25.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
50 |
BD235 |
25.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
51 |
BD236 |
25.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
52 |
BD237 |
25.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
53 |
BD238 |
25.000W Switching PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
54 |
BD239 |
30.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
55 |
BD239A |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
56 |
BD239B |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
57 |
BD239C |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE. |
Continental Device India Limited |
58 |
BD240 |
30.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
59 |
BD240A |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
60 |
BD240B |
30.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
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