DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 2.00

Datasheets found :: 456
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 272.002 Axial Lead and Cartridge Fuses Littelfuse
32 272.003 Axial Lead and Cartridge Fuses Littelfuse
33 272.004 Axial Lead and Cartridge Fuses Littelfuse
34 272.005 Axial Lead and Cartridge Fuses Littelfuse
35 2N5320 10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. Continental Device India Limited
36 2N5321 10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. Continental Device India Limited
37 2N6726 0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE Continental Device India Limited
38 30KW102 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
39 30KW102A 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
40 30KW132 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
41 30KW132A 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
42 3425L200DR Resettable PTC. Ihold = 2.00A, Itrip = 4.0, Vmax = 15Vdc. Reel quantity 1500. Littelfuse
43 APT1002R4BN POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm Advanced Power Technology
44 APT1002RBN POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm Advanced Power Technology
45 APT1002RCN POWER MOS IV 1000V 5.5A 2.00 Ohm Advanced Power Technology
46 AV102-12 HIP3 Variable Attenuator 1.70�2.00 GHz Alpha Industries Inc
47 AV102-12 HIP3™ Variable Attenuator 1.70-2.00 GHz Skyworks Solutions
48 BD233 25.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. Continental Device India Limited
49 BD234 25.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 25 hFE. Continental Device India Limited
50 BD235 25.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. Continental Device India Limited
51 BD236 25.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. Continental Device India Limited
52 BD237 25.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. Continental Device India Limited
53 BD238 25.000W Switching PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. Continental Device India Limited
54 BD239 30.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. Continental Device India Limited
55 BD239A 30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 40 hFE. Continental Device India Limited
56 BD239B 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 40 hFE. Continental Device India Limited
57 BD239C 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE. Continental Device India Limited
58 BD240 30.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. Continental Device India Limited
59 BD240A 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 40 hFE. Continental Device India Limited
60 BD240B 30.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 40 hFE. Continental Device India Limited


Datasheets found :: 456
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



© 2024 - www Datasheet Catalog com