| No. |
Part Name |
Description |
Manufacturer |
| 31 |
DX20-100SE |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 32 |
DX20-100SE-CP3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 33 |
DX20-100SE-CR2A |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 34 |
DX20-100SE-CR3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 35 |
DX20-100SE-LNA |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 36 |
DX20-100SW-CP3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 37 |
DX20-100SW-CR2A |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 38 |
DX20-100SW-CR3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 39 |
DX20-100SW-LNA |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 40 |
FSLM2520-100-J |
Wirewound Chip Inductors |
TOKO |
| 41 |
FSLM2520-100-K |
Wirewound Chip Inductors |
TOKO |
| 42 |
HCPL-5120-100 |
HCPL-5120-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
Agilent (Hewlett-Packard) |
| 43 |
HCPL-5120-100 |
HCPL-5120-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
Agilent (Hewlett-Packard) |
| 44 |
IRG4PF50W |
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package |
International Rectifier |
| 45 |
IRG4PF50WD |
900V Warp 20-100 kHz Copack IGBT in a TO-247AC package |
International Rectifier |
| 46 |
IRG4PF50WDPBF |
900V Warp 20-100 kHz Copack IGBT in a TO-247AC package |
International Rectifier |
| 47 |
M27C320-100M1 |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM |
ST Microelectronics |
| 48 |
M27C320-100N1 |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM |
ST Microelectronics |
| 49 |
M27V320-100M1 |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM |
ST Microelectronics |
| 50 |
M27V320-100M6 |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM |
ST Microelectronics |
| 51 |
M27V320-100N1 |
32 MBIT (4MB X8 OR 2MB X16) OTP EPROM |
ST Microelectronics |
| 52 |
M27V320-100N6 |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM |
ST Microelectronics |
| 53 |
MABAES0034 |
20-1000 MHz, RF 4:1 transformer |
MA-Com |
| 54 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 55 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 56 |
PSMN020-100YS |
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK |
Nexperia |
| 57 |
PSMN020-100YS |
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK |
NXP Semiconductors |
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