| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N6152A |
Diode TVS Single Bi-Dir 20.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 32 |
1N6280A |
Diode TVS Single Uni-Dir 20.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 33 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
| 34 |
1N968 |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 35 |
1N968 |
500 mW silicon planar zener diode. Max zener voltage 20.0 V. |
Fairchild Semiconductor |
| 36 |
1N968A |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 37 |
1N968B |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 38 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 39 |
20KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 40 |
20KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 41 |
2322 645 10/20. . . . |
NTC Thermistors, Long Lead Sensors |
Vishay |
| 42 |
274.050 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/20. Nominal resistance cold 3.20 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 43 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 44 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 45 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 46 |
5KP120 |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 47 |
5KP120A |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 48 |
APT10050JN |
POWER MOS IV 1000V 20.5A 0.50 Ohm |
Advanced Power Technology |
| 49 |
ATV15CJ240A-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=20.5V, Tolerance=10% |
Comchip Technology |
| 50 |
ATV15CJ240CA-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=20.5V, Tolerance=5% |
Comchip Technology |
| 51 |
BCR402R |
Analog Silicon SSICs - output current: 20..60mA |
Infineon |
| 52 |
BD157 |
20.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 53 |
BD158 |
20.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 54 |
BD159 |
20.000W Power NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 55 |
BD165 |
20.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD166 |
Continental Device India Limited |
| 56 |
BD166 |
20.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD165 |
Continental Device India Limited |
| 57 |
BD167 |
20.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD168 |
Continental Device India Limited |
| 58 |
BD168 |
20.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD167 |
Continental Device India Limited |
| 59 |
BD169 |
20.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Complementary BD170 |
Continental Device India Limited |
| 60 |
BD170 |
20.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Complementary BD169 |
Continental Device India Limited |
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