| No. |
Part Name |
Description |
Manufacturer |
| 31 |
GNR20D101K |
Varistor. |
Ceramate |
| 32 |
GNR20D102K |
Varistor. |
Ceramate |
| 33 |
GT20D101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 34 |
MDE-20D101 |
Metal Oxide Varistors |
etc |
| 35 |
MDE-20D101K |
Metal Oxide Varistors |
etc |
| 36 |
MDE-20D101K |
100V; max peak current:10000A; metal oxide varistor. Standard D series 20mm disc |
MDE Semiconductor |
| 37 |
MDE-20D102K |
Metal Oxide Varistors |
etc |
| 38 |
MDE-20D102K |
1000V; max peak current:75000A; metal oxide varistor. Standard D series 20mm disc |
MDE Semiconductor |
| 39 |
NFV20D101K |
Varistor |
Ceramate |
| 40 |
NFV20D102K |
Varistor |
Ceramate |
| 41 |
S20D100 |
SCHOTTKY BARRIER RECTIFIERS(20A,70-100V) |
MOSPEC Semiconductor |
| 42 |
S20D100A |
Dual schottky barrier rectifiers, 20A, 100V |
MOSPEC Semiconductor |
| 43 |
S20D100C |
Dual schottky barrier rectifiers, 20A, 100V |
MOSPEC Semiconductor |
| 44 |
S20D100D |
Dual schottky barrier rectifiers, 20A, 100V |
MOSPEC Semiconductor |
| 45 |
S524C20D10 |
1K/2K/4K/8K-bit Serial EEPROM |
Samsung Electronic |
| 46 |
S524C20D10 S524C80D80 S524C80D40 S524C20 |
S524C20D10/20D20/80D40/80D80(KS24C010/020/040/080) Serial EEPROM Data Sheet |
Samsung Electronic |
| 47 |
S524C20D10 S524C80D80 S524C80D40 S524C20 |
S524C20D10/20D20/80D40/80D80(KS24C010/020/040/080) Serial EEPROM Data Sheet |
Samsung Electronic |
| 48 |
U20D10 |
POWER RECTIFIERS(20A,50-200V) |
MOSPEC Semiconductor |
| | | |
