| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2U3838K33QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 32 |
2U3838L30QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 33 |
489D107X020N26V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 34 |
489D686X020N26V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 35 |
5962-3826707 |
128K x 8 EEPROM, MIL-STD-883C, 120ns |
Intersil |
| 36 |
5962-8863401UX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
| 37 |
5962-8863401XAC |
32kx8 EEPROM, High Speed, MIL-STD-883, 120ns |
Intersil |
| 38 |
5962-8863401XX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
| 39 |
5962-8863401YX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
| 40 |
5962-8863401ZCC |
32kx8-Bit, CMOS EEPROM, High Speed, MILSTD-883, 120ns |
Intersil |
| 41 |
5962-8863401ZX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
| 42 |
5962-8863402UX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
| 43 |
5962-8863402XX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
| 44 |
5962-8863402YX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
| 45 |
5962-8863402ZX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
| 46 |
5962-88724043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 47 |
5962-8872404LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 48 |
5962-89755043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 49 |
5962-8975504LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 50 |
5962-89839022A |
High performance E2CMOS PLD generic array logic, 20ns |
Lattice Semiconductor |
| 51 |
5962-8983902RA |
High performance E2CMOS PLD generic array logic, 20ns |
Lattice Semiconductor |
| 52 |
5962-9086907 |
64kx8 CMOS, EEPROM, MIL-STD-883, 120ns |
Intersil |
| 53 |
5962-9086907 |
64kx8 CMOS, EEPROM, MIL-STD-883, 120ns |
Intersil |
| 54 |
5962-9086908 |
64kx8 EEPROM, CMOS, 120ns |
Intersil |
| 55 |
5962D0053603QUA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 56 |
5962D0053603QUC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 57 |
5962D0053603QUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 58 |
5962D0053603QXA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 59 |
5962D0053603QXC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 60 |
5962D0053603QXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
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