| No. |
Part Name |
Description |
Manufacturer |
| 31 |
20DZ47 |
20W 47V Zener Diode |
IPRS Baneasa |
| 32 |
20DZ56 |
Silicon zener diode 20W |
IPRS Baneasa |
| 33 |
20DZ56 |
20W 56V Zener Diode |
IPRS Baneasa |
| 34 |
20DZ68 |
Silicon zener diode 20W |
IPRS Baneasa |
| 35 |
20DZ68 |
20W 68V Zener Diode |
IPRS Baneasa |
| 36 |
20DZ6V8 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 37 |
20DZ6V8 |
20W 6.8V Zener Diode |
IPRS Baneasa |
| 38 |
20DZ8 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 39 |
20DZ82 |
Silicon zener diode 20W |
IPRS Baneasa |
| 40 |
20DZ82 |
20W 82V Zener Diode |
IPRS Baneasa |
| 41 |
20DZ8V2 |
20W 8.2V Zener Diode |
IPRS Baneasa |
| 42 |
20RIF120W |
V(rrm): 1200V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 43 |
2220WXXX |
High Voltage MLC Chip |
AVX Corporation |
| 44 |
28F320W30 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
Intel |
| 45 |
2N5641 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
| 46 |
2N5642 |
NPN silicon RF power transistor 20W - 175MHz |
Motorola |
| 47 |
2N5642 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
| 48 |
2N5643 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
| 49 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
| 50 |
2N6576 |
15A NPN silicon darlington 120W power transistor |
Motorola |
| 51 |
2N6577 |
15A NPN silicon darlington 120W power transistor |
Motorola |
| 52 |
2N6578 |
15A NPN silicon darlington 120W power transistor |
Motorola |
| 53 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 54 |
2SC3560 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 55 |
2SC3561 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 56 |
2SD1414 |
4A; 20W; V(ceo): 80V; NPN darlington transistor |
TOSHIBA |
| 57 |
2SK612 |
V(dss): 100V; 20W; fast switching N-channel silicon power MOS FET. For industrial use |
NEC |
| 58 |
350PEQ120W |
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 59 |
40936 |
20W (PEP) Emitter-Ballasted Overlay Transistor for 2-to-30-MHz Single Sideband Linear Amplifier Applications |
RCA Solid State |
| 60 |
40RIF120W |
V(rrm): 1200V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
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