No. |
Part Name |
Description |
Manufacturer |
31 |
121-93-964-41-001 |
Dual-in-line sockets Open frame Wire-wrap 1 / 2 / 3 / 4 level |
Precid-Dip Durtal |
32 |
321-93-116-41-001 |
PCB connectors 2.54 mm Single row / double row / wire-wrap 1/2/3/4 level / wire-wrap solder tail |
Precid-Dip Durtal |
33 |
421-93-216-41-001 |
PCB connectors 2.54 mm Single row / double row / wire-wrap 1/2/3/4 level / wire-wrap solder tail |
Precid-Dip Durtal |
34 |
521-91-108-12-051-001 |
Pin grid array sockets / interconnect receptacle and pin / solder tail Receptacle with wire-wrap posts |
Precid-Dip Durtal |
35 |
521-93-108-12-051-001 |
Pin grid array sockets / interconnect receptacle and pin / solder tail Receptacle with wire-wrap posts |
Precid-Dip Durtal |
36 |
521-97-108-12-051-001 |
Pin grid array sockets / interconnect receptacle and pin / solder tail Receptacle with wire-wrap posts |
Precid-Dip Durtal |
37 |
521-99-108-12-051-001 |
Pin grid array sockets / interconnect receptacle and pin / solder tail Receptacle with wire-wrap posts |
Precid-Dip Durtal |
38 |
D5C121-90 |
1200 GATE CHMOS H-SERIES ERASABLE PROGRAMMABLE LOGIC DEVICE |
Intel |
39 |
MRF6522-70 |
MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
40 |
MRF9130L |
MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
41 |
SST34HF1621-90-4C-L1P |
16 Mbit concurrent superflash + SRAM combo-memory |
Silicon Storage Technology |
42 |
SST34HF1621-90-4C-LFP |
16 Mbit concurrent superflash + SRAM combo-memory |
Silicon Storage Technology |
43 |
SST34HF1621-90-4E-L1P |
16 Mbit concurrent superflash + SRAM combo-memory |
Silicon Storage Technology |
44 |
SST34HF1621-90-4E-LFP |
16 Mbit concurrent superflash + SRAM combo-memory |
Silicon Storage Technology |
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