No. |
Part Name |
Description |
Manufacturer |
31 |
1214GN-280 |
GaN Transistors |
Microsemi |
32 |
1214GN-280LV |
GaN Transistors |
Microsemi |
33 |
1214GN-400LV |
|
Microsemi |
34 |
1214GN-500 |
GaN Transistors |
Microsemi |
35 |
1214GN-550V |
GaN Transistors |
Microsemi |
36 |
1214GN-600VHE |
GaN Transistors |
Microsemi |
37 |
1214GN-750V |
GaN Transistors |
Microsemi |
38 |
15KP120 |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
39 |
15KP120C |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
40 |
1N214 |
Silicon Zener Diode |
Motorola |
41 |
1N2146 |
Signal Diode |
Motorola |
42 |
1N2147 |
Rectifier Diode |
Motorola |
43 |
1N2147A |
Rectifier Diode |
Motorola |
44 |
1N2148 |
Rectifier Diode |
Motorola |
45 |
1N2148A |
Rectifier Diode |
Motorola |
46 |
1N2149 |
Rectifier Diode |
Motorola |
47 |
1N2149A |
Rectifier Diode |
Motorola |
48 |
1N2214 |
Zener Diode 5.6V 1W |
Motorola |
49 |
1N3214 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
50 |
1N3214 |
600V 15A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
51 |
1N3214 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
52 |
1N3214 |
Rectifier Diode 15A 600V |
Motorola |
53 |
1N3214 |
Medium current silicon rectifier |
Motorola |
54 |
1N3214 |
Diode 600V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
55 |
1N3214R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
56 |
1N3214R |
600V 15A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
57 |
1N3214R |
Standard Rectifier (trr more than 500ns) |
Microsemi |
58 |
1N4214 |
Zener Diode 33V 10W |
Motorola |
59 |
1N4214A |
Zener Diode 33V 10W |
Motorola |
60 |
1N4214B |
Zener Diode 33V 10W |
Motorola |
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