No. |
Part Name |
Description |
Manufacturer |
31 |
M27C322-100S1 |
32 MBIT (2MB X16) UV EPROM AND OTP EPROM |
ST Microelectronics |
32 |
M27V322-100B1 |
32 MBIT (2MB X16) LOW VOLTAGE UV EPROM AND OTP EPROM |
ST Microelectronics |
33 |
M27V322-100F1 |
32 MBIT (2MB X16) LOW VOLTAGE UV EPROM AND OTP EPROM |
ST Microelectronics |
34 |
M27V322-100F6 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
35 |
M27V322-100P1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
36 |
M27V322-100P6 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
37 |
M27V322-100S1 |
32 MBIT (2MB X16) LOW VOLTAGE UV EPROM AND OTP EPROM |
ST Microelectronics |
38 |
M27V322-100XF1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
39 |
M27V322-100XF6 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
40 |
M27V322-100XP1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
41 |
M27V322-100XP6 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
42 |
MRF6522_10_D |
MRF6522-10R1 960 MHz, 10 W, 26 V Lateral N-Channel RF Power MOSFET |
Motorola |
43 |
MSM518122-10JS |
131,072-word x 8-bit multiport DRAM |
OKI electronic components |
44 |
MSM518122-10ZS |
131,072-word x 8-bit multiport DRAM |
OKI electronic components |
45 |
P4C422-10PC |
10 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
46 |
P4C422-10SC |
10 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
47 |
P722-10R |
CbS photoconductive cell |
Hamamatsu Corporation |
48 |
SMV20422-10 |
2.5V; 250mW; surface mount 2042/2041 series varactor hyperabrupt tuning diode |
Knox Semiconductor Inc |
49 |
SMV30222-10 |
VBR:8V min; 250mW; surface mount 3022/3033 series varactor super hyperabrupt tuning diode for VCXOs |
Knox Semiconductor Inc |
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