| No. |
Part Name |
Description |
Manufacturer |
| 31 |
123-93-964-41-001 |
Dual-in-line sockets Open frame Wire-wrap 1 / 2 / 3 / 4 level |
Precid-Dip Durtal |
| 32 |
1N3823-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 33 |
1N4123-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 34 |
1N4123-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 35 |
1N4123-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 36 |
1N4623-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 37 |
1N4623-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 38 |
1N4623-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 39 |
1N4723-1 |
Diode Switching 600V 3A 2-Pin TOP HAT |
New Jersey Semiconductor |
| 40 |
1N4723-3 |
Diode Switching 600V 3A 2-Pin TOP HAT |
New Jersey Semiconductor |
| 41 |
1N823-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 42 |
1N823-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 43 |
1SS123-L |
Silicon switching diode |
NEC |
| 44 |
1SS123-T1B |
Silicon switching diode |
NEC |
| 45 |
1SS123-T2B |
Silicon switching diode |
NEC |
| 46 |
1SS223-L |
Silicon switching diode |
NEC |
| 47 |
1SS223-T1B |
Silicon switching diode |
NEC |
| 48 |
1SS223-T2B |
Silicon switching diode |
NEC |
| 49 |
2020-6623-30 |
7-12.4 GHz, directional couplers mini, octave bandwidth |
MA-Com |
| 50 |
2020-6623-30 |
Directional Couplers Mini, Octave Bandwidth |
Tyco Electronics |
| 51 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 52 |
2023-1.5 |
1.5 W, 22 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 53 |
2023-1.5-2 |
1.5 W, 22 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 54 |
2023-12 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 55 |
2023-12-2 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 56 |
2023-16 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 57 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 58 |
2023-16-2 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 59 |
2023-3 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 60 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
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