| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N6280A |
24 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 32 |
1N6280C |
24 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 33 |
1N6280CA |
24 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 34 |
1N970 |
400mW, 24 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 35 |
1N970A |
24 V, 5.2 mA, silicon planar zener diode |
Honey Technology |
| 36 |
1N970A |
24 V, zener diode |
Leshan Radio Company |
| 37 |
1N970B |
24 V, 5.2 mA, silicon planar zener diode |
Honey Technology |
| 38 |
1N970B-1 |
24 V, 400 mW silicon zener diode |
BKC International Electronics |
| 39 |
1SMA4749 |
24 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 40 |
1SMB5934 |
24 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 41 |
1SMB5934A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 24 V. +-10% tolerance. |
Motorola |
| 42 |
1SMB5934B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 24 V. +-5% tolerance. |
Motorola |
| 43 |
1SMC5359 |
24 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 44 |
1V015 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
| 45 |
2020-1200 |
Delay 1200 +/-24 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 46 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
| 47 |
2023-12 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 48 |
2023-12-2 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 49 |
2023-16 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 50 |
2023-16-2 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 51 |
2023-3 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 52 |
2023-3-2 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 53 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 54 |
2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 55 |
2225-4L |
3.5 W, 24 V, 2200-2500 MHz common base transistor |
GHz Technology |
| 56 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 57 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 58 |
24 DIP |
24DIP Package Dimensions |
Samsung Electronic |
| 59 |
24 SDIP |
24SDIP Package Dimensions |
Samsung Electronic |
| 60 |
24 SKINNY DIP |
Package Dimensions |
Samsung Electronic |
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