Datasheets for 256AP

Datasheets found :: 48 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
31	HN58C256AP	Parallel EEPROMs	Hitachi Semiconductor
32	HN58C256AP-10	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	Hitachi Semiconductor
33	HN58C256AP-10	Memory>EEPROM>Parallel EEPROM	Renesas
34	HN58C256AP-85	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	Hitachi Semiconductor
35	HN58C256AP-85	Memory>EEPROM>Parallel EEPROM	Renesas
36	HY62256AP	32Kx8bit CMOS SRAM	Hynix Semiconductor
37	HY62256AP-55	32Kx8bit CMOS SRAM, standby current=1mA, 55ns	Hynix Semiconductor
38	HY62256AP-70	32Kx8bit CMOS SRAM, standby current=1mA, 70ns	Hynix Semiconductor
39	HY62256AP-85	32Kx8bit CMOS SRAM, standby current=1mA, 85ns	Hynix Semiconductor
40	HY62256AP-I	32Kx8bit CMOS SRAM	Hynix Semiconductor
41	HY62256AP-I-55	32Kx8bit CMOS SRAM, standby current=1mA, 55ns	Hynix Semiconductor
42	HY62256AP-I-70	32Kx8bit CMOS SRAM, standby current=1mA, 70ns	Hynix Semiconductor
43	HY62256AP-I-85	32Kx8bit CMOS SRAM, standby current=1mA, 85ns	Hynix Semiconductor
44	KM41256AP-10	256K x 1-bit DRAM, 100ns	Samsung Electronic
45	KM41256AP-12	256K x 1-bit DRAM, 120ns	Samsung Electronic
46	KM41256AP-15	256K x 1-bit DRAM, 150ns	Samsung Electronic
47	TC54256AP	32768 word x 8-bit CMOC one time programmable read only memory, 200ns	TOSHIBA
48	TC9256APG	PLL	TOSHIBA

Datasheets found :: 48 Page: | 1 | 2 |