| No. |
Part Name |
Description |
Manufacturer |
| 31 |
M87C257-10XF6X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 32 |
M87C257-10XF7X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 33 |
P3257-10 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 34 |
TMS4257-10FME |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 35 |
TMS4257-10FML |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 36 |
TMS4257-10FMS |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 37 |
TMS4257-10NE |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 38 |
TMS4257-10NL |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 39 |
TMS4257-10NS |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 40 |
TMS4257-10SDE |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 41 |
TMS4257-10SDL |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 42 |
TMS4257-10SDS |
262144-bit dynamic random-access memory, 100ns |
Texas Instruments |
| 43 |
W27E257-10 |
32K X 8 ELECTRICALLY ERASABLE EPROM |
Winbond Electronics |
| | | |
