| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BALF-2690-02D3 |
50Ω nominal input / conjugate match balun to STLC2690, with integrated harmonic filter |
ST Microelectronics |
| 32 |
BALF-2690-02D3 |
50Ω nominal input / conjugate match balun to STLC2690, with integrated harmonic filter |
ST Microelectronics |
| 33 |
CSA1220 |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSC2690 |
Continental Device India Limited |
| 34 |
CSA1220A |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 2.500A Ic, 60 - 320 hFE. Complementary CSC2690A |
Continental Device India Limited |
| 35 |
CSA1220AO |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690AO |
Continental Device India Limited |
| 36 |
CSA1220AR |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690AR |
Continental Device India Limited |
| 37 |
CSA1220AY |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690AY |
Continental Device India Limited |
| 38 |
CSA1220O |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690O |
Continental Device India Limited |
| 39 |
CSA1220R |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690R |
Continental Device India Limited |
| 40 |
CSA1220Y |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690Y |
Continental Device India Limited |
| 41 |
CSC2690 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSA1220 |
Continental Device India Limited |
| 42 |
CSC2690A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSA1220A |
Continental Device India Limited |
| 43 |
CSC2690AO |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSA1220AO |
Continental Device India Limited |
| 44 |
CSC2690AR |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSA1220AR |
Continental Device India Limited |
| 45 |
CSC2690AY |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSA1220AY |
Continental Device India Limited |
| 46 |
CSC2690O |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSA1220O |
Continental Device India Limited |
| 47 |
CSC2690R |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSA1220R |
Continental Device India Limited |
| 48 |
CSC2690Y |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSA1220Y |
Continental Device India Limited |
| 49 |
DS26900 |
JTAG Multiplexer/Switch |
MAXIM - Dallas Semiconductor |
| 50 |
DS26900DK |
Demo Kit for the DS26900 |
MAXIM - Dallas Semiconductor |
| 51 |
DS26900DK |
Demo Kit for the DS26900 |
MAXIM - Dallas Semiconductor |
| 52 |
DS26900LN+ |
JTAG Multiplexer/Switch |
MAXIM - Dallas Semiconductor |
| 53 |
GTRA262802FC-V2 |
High Power RF GaN on SiC HEMT 250W, 48V, 2490 - 2690 MHz |
Wolfspeed |
| 54 |
GTRA263902FC-V2 |
High Power RF GaN on SiC HEMT 370W, 48V, 2495 - 2690 MHz |
Wolfspeed |
| 55 |
GTVA261802FC-V1 |
High Power RF GaN on SiC HEMT 170W, 48V, 2620 - 2690 MHz |
Wolfspeed |
| 56 |
GTVA262701FA-V2 |
High Power RF GaN on SiC HEMT 270W, 48V, 2620 - 2690 MHz |
Wolfspeed |
| 57 |
GTVA262711FA-V2 |
High Power RF GaN on SiC HEMT 300W, 48V, 2620 - 2690 MHz |
Wolfspeed |
| 58 |
GTVA263202FC-V1 |
High Power RF GaN on SiC HEMT 340W, 48V, 2620 - 2690 MHz |
Wolfspeed |
| 59 |
KSA2690 |
Audio Frequency High Frequency Power Amplifier |
Fairchild Semiconductor |
| 60 |
KSA2690A |
NPN high frequency power amplifier transistor |
Fairchild Semiconductor |
| | | |
