No. |
Part Name |
Description |
Manufacturer |
31 |
1N6270 |
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
32 |
1N6270 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
33 |
1N6270 |
TRANSZORB�Transient Voltage Suppressors |
Vishay |
34 |
1S2270 |
Silicon voltage reference diode 400mW 27V |
Texas Instruments |
35 |
1S270 |
10 Watt reference diode |
TOSHIBA |
36 |
1S270 |
Zener diode |
TOSHIBA |
37 |
1S270 |
Silicon junction zener diode 10W 13V |
TOSHIBA |
38 |
1SS270 |
Small Signal |
Hitachi Semiconductor |
39 |
1SS270 |
SWITCHING DIODES |
Leshan Radio Company |
40 |
1SS270 |
Diodes>Switching |
Renesas |
41 |
1SV270 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
42 |
1ZB270 |
ZENER DIODE 1W |
TOSHIBA |
43 |
23S270 |
Bobbin Wound Surface Mount Inductors |
C&D Technologies |
44 |
2729GN-270 |
GaN Transistors |
Microsemi |
45 |
2N1270 |
Silicon NPN Transistor |
Motorola |
46 |
2N2270 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
47 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
48 |
2N2270 |
Switching NPN transistor |
FERRANTI |
49 |
2N2270 |
NPN low noise transistor |
FERRANTI |
50 |
2N2270 |
Silicon N-P-N planar transistor. |
General Electric Solid State |
51 |
2N2270 |
Silicon NPN Transistor |
Motorola |
52 |
2N2270 |
Medium Power NPN Transistor |
National Semiconductor |
53 |
2N2270 |
Trans GP BJT NPN 45V 3-Pin TO-39 Box |
New Jersey Semiconductor |
54 |
2N270 |
Germanium PNP Transistor |
Motorola |
55 |
2N3270 |
THYRISTOR |
Motorola |
56 |
2N4270 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
57 |
2N4270 |
Silicon NPN Transistor |
Motorola |
58 |
2N5270 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
59 |
2N5270 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
60 |
2N5270 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
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